...ector to Emitter Voltage - V
12
1
10 IC - Collector Current - mA
100
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10
fT - Ga...3
2SC5012
NOISE FIGURE vs. COLLECTOR CURRENT VCE = 8 V f = 1 GHz MAXIMUM AVAILABLE GAIN/INSERTIO...
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...ector to Emitter Voltage - V
12
1
2
5 10 20 IC - Collector Current - mA
50
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 12...3
2SC5013
NOISE FIGURE vs. COLLECTOR CURRENT MAG - Maximum Available Gain - dB |S21e|2 - Inserti...
Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...0 V Min
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
2SC5022
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak cu...
...0 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)