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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
K7Q161862 K7Q161862B K7Q163662B
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OCR Text |
...m
Revision History
Rev. No. 0.0 1.0 History 1. Initial document. 1. Final spec release Draft Date Jan. 27, 2004 mar. 18, 2004 Remark Adv...8m,4N,8N 10R 11R 2R 1R 3A,7A,1B,5B,9B,10B,1C,2C,9C,1D,9D, 10D,1E,2E,9E,1F,9F,10F,1G,9G,10G,1H,1J,2J,... |
Description |
512Kx36 & 1mx18 QDRTm b2 SRAm 512Kx36 & 1mx18 QDRTm b2 SRAm 512Kx36
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File Size |
333.83K /
17 Page |
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it Online |
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STMicro
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Part No. |
STTA806G STTA806DI STTA806D 3177
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OCR Text |
...power dissipation IF(AV) = 8A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC / D2PAK TO-220AC ins. TO-220AC /D2PAK TO-2...8m.N maximum torque value : 1m.N Ordering type STTA806D STTA806DI STTA806G STTA806G-TR marking STTA8... |
Description |
TURBOSWITCH Tm ULTRA-FAST HIGH VOLTAGE DIODE From old datasheet system
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File Size |
87.64K /
9 Page |
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it Online |
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FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
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Part No. |
2SK2906-01
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OCR Text |
...30 1268.3 150 150 -55 ~ +150
L=0.169mH,Vcc=24V
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specifi...8m 100A
150W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=... |
Description |
N-channel mOS-FET N-channel mOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, mOSFET, TO-247
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File Size |
248.45K /
3 Page |
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SANYO[Sanyo Semicon Device]
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Part No. |
2SK3293
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OCR Text |
...062A
[2SK3293]
4.5 1.6 1.5
0.5 3 1.5 2 3.0 0.75 1
1.0
0.4
2.5 4.25max
0.4
Specifications
Absolute maximum Ratings at Ta...8m
m)
140 160
0 0 20
Ambient Temperature, Ta - C
40
60
80
100
120
0
2... |
Description |
Ultrahigh-Speed Switching Applications N-Channel Silicon mOSFET
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File Size |
41.18K /
4 Page |
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it Online |
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Price and Availability
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