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  0.8m m Datasheet PDF File

For 0.8m m Found Datasheets File :: 2989    Search Time::2.469ms    
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    K7Q161862 K7Q161862B K7Q163662B

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q161862 K7Q161862B K7Q163662B
OCR Text ...m Revision History Rev. No. 0.0 1.0 History 1. Initial document. 1. Final spec release Draft Date Jan. 27, 2004 mar. 18, 2004 Remark Adv...8m,4N,8N 10R 11R 2R 1R 3A,7A,1B,5B,9B,10B,1C,2C,9C,1D,9D, 10D,1E,2E,9E,1F,9F,10F,1G,9G,10G,1H,1J,2J,...
Description 512Kx36 & 1mx18 QDRTm b2 SRAm
512Kx36 &amp; 1mx18 QDRTm b2 SRAm 512Kx36

File Size 333.83K  /  17 Page

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    MCH3405

SANYO[Sanyo Semicon Device]
Part No. mCH3405
OCR Text ...ons unit : mm 2167 [mCH3405] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 1.6 2.1 1 0.65 2....8m m ) 0 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- C IT02993 No.69...
Description N-Channel Silicon mOSFET
Ultrahigh-Speed Switching Applications

File Size 27.63K  /  4 Page

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    MPS651

KEC Holdings
KEC[KEC(Korea Electronics)]
Part No. mPS651
OCR Text ...TERS 4.70 mAX 4.80 mAX 3.70 mAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 mAX 2.30 0.45 mAX 1.00 J 1. EmITTER 2. BASE 3. COLLECTOR ...8m A 6m A I C - V CE 1k 50m A 30m A 20m A 10mA 6mA 800 600 400 200 0 4mA 3mA 2m...
Description EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAmP DRIVER, INDUSTRIAL USE)

File Size 72.33K  /  3 Page

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    RC28F640J3A-120 RC28F320J3 E28F128J3A RC28F128J3 E28F640J3A-120 RC28F128J3A-150 RC28F320J3A-110 28F128 28F128J3A E28F128

INTEL[Intel Corporation]
Part No. RC28F640J3A-120 RC28F320J3 E28F128J3A RC28F128J3 E28F640J3A-120 RC28F128J3A-150 RC28F320J3A-110 28F128 28F128J3A E28F128J3A-150 E28F320J3A-110
OCR Text ...gram -- Program Suspend to Read 0.25 Intel(R) StrataFlashTm memory Technology Capitalizing on Intel's 0.25 generation two-bit-per-cell technology, second generation Intel(R) StrataFlashTm memory products provide 2X the bits in 1X the s...
Description 3 Volt Intel StrataFlash memory

File Size 317.48K  /  58 Page

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    STTA806G-TR STTA806DIRG STTA806DI STTA806 STTA806D STTA806G

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STTA806G-TR STTA806DIRG STTA806DI STTA806 STTA806D STTA806G
OCR Text ...power dissipation IF(AV) = 8A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC / D PAK TO-220AC ins. TO-220AC / D2PAK TO-...8m.N maximum torque value : 1m.N Ordering type STTA806D STTA806DI STTA806G STTA806G-TR marking STTA8...
Description TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

File Size 263.23K  /  9 Page

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    STMicro
Part No. STTA806G STTA806DI STTA806D 3177
OCR Text ...power dissipation IF(AV) = 8A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC / D2PAK TO-220AC ins. TO-220AC /D2PAK TO-2...8m.N maximum torque value : 1m.N Ordering type STTA806D STTA806DI STTA806G STTA806G-TR marking STTA8...
Description TURBOSWITCH Tm ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system

File Size 87.64K  /  9 Page

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    2SK2906-01

FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
Part No. 2SK2906-01
OCR Text ...30 1268.3 150 150 -55 ~ +150 L=0.169mH,Vcc=24V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specifi...8m 100A 150W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=...
Description    N-channel mOS-FET
N-channel mOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, mOSFET, TO-247

File Size 248.45K  /  3 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SK3293
OCR Text ...062A [2SK3293] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute maximum Ratings at Ta...8m m) 140 160 0 0 20 Ambient Temperature, Ta - C 40 60 80 100 120 0 2...
Description Ultrahigh-Speed Switching Applications
N-Channel Silicon mOSFET

File Size 41.18K  /  4 Page

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    APM2007 APM2007UC-TR APM2007NUC-TR

ANPEC[Anpec Electronics Coropration]
Anpec Electronics Corporation
Part No. APm2007 APm2007UC-TR APm2007NUC-TR
OCR Text ...GS =4.5V , 20 1 1 1.5 6 8 16 0.7 28 5.2 7.6 17 2 100 7.5 9.5 18 1.3 35 V A V nA m V Dynam ic Qg Total G ate Charge Q gs Gate-Source Charge Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Drain Charge Turn-on Delay Time Turn-on Ris...
Description 20 V, N-channel enhancement mode mOSFET

File Size 144.71K  /  9 Page

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    CPH3409

Sanyo Semicon Device
Part No. CPH3409
OCR Text ...unit : mm 2152A [CPH3409] 2.9 0.4 3 0.6 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.05 1.6 2.8 1 1.9 2 ...8m m ) 160 140 Ambient Temperature, Ta -- C IT03826 No.7123-3/4 CPH3409 Spe...
Description N-Channel Silicon mOSFET

File Size 31.74K  /  4 Page

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For 0.8m m Found Datasheets File :: 2989    Search Time::2.469ms    
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