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Sanyo
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| Part No. |
2SK1923 1003
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| OCR Text |
...2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2
0.8
14.0
15.1
0.4
1
2
3
2.7
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Cur... |
| Description |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
From old datasheet system
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| File Size |
113.50K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SK2011 1008
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| OCR Text |
...s
unit:mm 2063A
[2SK2011]
10.0 3.2 4.5 2.8
3.5 7.2 16.0
18.1
5.6
14.0
1.6 1.2 0.75 12 3 2.55
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Volt... |
| Description |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
From old datasheet system
|
| File Size |
112.27K /
4 Page |
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it Online |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
2SK2653-01R
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| OCR Text |
... =25C
Min. 900 3,5
Typ. 4,0 10 0,2 10 1,87 4 900 130 70 25 80 70 40 1,0 850 8,5
Max. 4,5 500 1,0 100 2,5
6
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
Symbol R th(... |
| Description |
N-channel MOS-FET
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| File Size |
310.61K /
2 Page |
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it Online |
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hitachi
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| Part No. |
2SK2851
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| OCR Text |
...
* Low on-resistance R DS(on) = 0.055 typ. (at VGS = 10 V, I D = 2.5 A) * 4V gate drive devices. * Large current capacitance ID = 5 A
Outline
2SK2851
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source vo... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
67.80K /
10 Page |
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it Online |
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hitachi
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| Part No. |
2SK2931
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| OCR Text |
...res
* Low on-resistance R DS = 0.010 typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
2SK2931
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain cur... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
23.65K /
5 Page |
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it Online |
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hitachi
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| Part No. |
2SK2937
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| OCR Text |
...ures
* Low on-resistance R DS =0.026 typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
TO-220FM
D
G
12 S
1. Gate 2. Drain 3. Source
3
2SK2937
Absolute Maximum Ratings (Ta = 25C)
... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
68.98K /
10 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
2SK3467 2SK3467-ZK 2SK3467-ZK-AZ
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| OCR Text |
...n-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A) * Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V) * Built-in gate protection diode * Surface mount device available (TO-220AB)
ABSOLUTE MAXIMUM RATINGS ... |
| Description |
80 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZK, 3 PIN
PROFET™: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
PROFET™: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Nch power MOS FET (Switching)
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| File Size |
65.47K /
8 Page |
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it Online |
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Price and Availability
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