.125 3.17 pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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.125 3.17 Datasheet PDF File

For .125 3.17 Found Datasheets File :: 93179 Search Time::2.953ms
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				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... 100 TA , CASE TEMPERATURE (oC) 125 150 0.6 0.4 0.2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1....3 10-2 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10 PDM 0.01 10-5...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... 9 12 15 A 0 25 50 75 100 125 A 150 V G S - Gate-to-Source V olta ge (V ) Starting T ,JJunction Temperature (C) Fig 7. Ty...3 2 .0 0 4 0 .0 1 4 .0 0 7 5 .1 8 9 .1 5 0 MAX .0688 .0098 .018 .0 09 8 .1 96 .157 M IL L IM E T ...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...r t d(off) tf 0 25 50 75 100 125 150 175 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature ...3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	... 5 VGS 10% 0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10...3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (....
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	...) -20 -15 -10 -5 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 0 25 75 125 175 TC, CASE TEMPERATURE (...3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 1 10 PDM 0.01 10-5 10-4 FIGURE 3. NORMALIZE...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	... 0 0 50 100 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CAS...3 10-2 10-1 1 10 t1 , RECTANGULAR PULSE DURATION (s) 10-4 FIGURE 3. NORMALIZED MAXIMUM TRANSIE...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...f) tf VGS 0 25 50 75 100 125 150 A 175 10% TC , C as e Tem perature (C ) 90% Fig 9. Maximum Drain Current Vs. Case Temp...3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...tf VGS 10% 0 25 50 75 100 125 150 175 T C , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature...3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...ff) tf VGS 0 25 50 75 100 125 150 175 10% T C , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperat...3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...00 0.472 0.05 0.002 MIN 0.125 0.035 0~8 0.45~0.75 0.018~0.030 ( 0.50 ) 0.020 4 0.005-0.001 +0.003 1.20 0.047MAX ...3 4 1 N.C N.C N.C /WP NC 2 3 4 5 6 N.C N.C N.C N.C A B N.C A B A...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

For .125 3.17 Found Datasheets File :: 93179 Search Time::2.953ms
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