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				International Rectifier
Part No.	IRF3202SPBF IRL3202SPBF
OCR Text	...94. IRL3202SPbF 1000 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V...
Description	HEXFET Power MOSFET
File Size	228.08K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI520NPBF
OCR Text	... 10V, See Fig. 6 and 13 VDD = 50V ID = 5.7A ns RG = 22 RD = 8.6, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 330 VGS = 0V 92 VDS = 25V pF 54 = 1.0MHz, See Fig. 5 12 = 1.0MHz D ...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	254.93K / 9 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	STU25L01
OCR Text	...switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =12.5a v ds =10v , i d =12.5a input capacitance output capacitance dynamic ...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	89.30K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP9140NPBF IRFP9140NPBF-15
OCR Text	...DS = V GS, ID = -250A S VDS = -50V, ID = 11A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 97 ID = -11A 15 nC VDS = -80V 51 VGS = -10V, See Fig. 6 and 13 VDD = -50V ID = -11A ns RG = ...
Description	ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	234.46K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7452
OCR Text	...orward voltage v gs =10v, v ds =50v, r l =20 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =50v, i d =2.5a gate source charge gate drain charge m w i s =1a,v gs =0v v ds =5v, ...
Description	100V N-Channel MOSFET
File Size	243.29K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFS3207PBF IRFB3207PBF IRFSL3207PBF
OCR Text	...- --- S nC Conditions VDS = 50V, ID = 75A ID = 75A VDS = 60V VGS = 10V VDD = 48V ID = 75A RG = 2.6 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V VGS = 0V, VDS = 0V to 60V g g ns pF iA j, See Fig.11 h, S...
Description	High Efficiency Synchronous Rectification in SMPS 75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA HEXFET?Power MOSFET HEXFET㈢Power MOSFET High Efficiency Synchronous Rectification in SMPS
File Size	377.60K / 12 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	IRG4BAC50W
OCR Text	...IDTH 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.co...
Description	Insulated Gate Bipolar Transistor
File Size	161.92K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	IMB10AT110
OCR Text	50v complex digital transistors (bias resistor built-in transistors) ? outline ? features 1) built-in biasing resistors. 2) two dta123j chips in one package. 3) built-in bias resistors enable the configuration of an inverter circuit wi...
Description	PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors
File Size	516.58K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4IBC30SPBF
OCR Text	...IDTH 10 0.1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	191.01K / 9 Page	View it Online	Download Datasheet

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