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  -30v-0.5a Datasheet PDF File

For -30v-0.5a Found Datasheets File :: 12053    Search Time::6.969ms    
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    SP6132EB SP6132CU

SIPEX[Sipex Corporation]
Part No. SP6132EB SP6132CU
OCR Text ...ivered with the output set to 3.30V, by simply changing one resistor, R2, the SP6132 can be set to other output voltages. The relationship i...0.80V. Standard 1% metal film resistors of surface mount size 0603 are recommended. Vout = 0.80V ( R...
Description Evaluation Board Manual

File Size 403.35K  /  9 Page

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    SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
OCR Text ...leakage current I GSS VGS=30V, VDS=0V VGS=10V, ID=4.6A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resist...0/13V, ID=7.3A, RG=12, Tj=125C - ns VDD=480V, ID=7.3A - 3 9.2 21 5.5 27 - nC ...
Description Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

File Size 370.24K  /  14 Page

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    SSF17N60A

FAIRCHILD[Fairchild Semiconductor]
Part No. SSF17N60A
OCR Text ...A See Fig 7 VDS=5V,ID=250 A VGS=30V VGS=-30V VDS=600V VDS=480V,TC=125 C VGS=10V,ID=4.5A VDS=50V,ID=4.5A 4 O 4 O o o V/ C ID=250 A 3...0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V SSH17N60A Fig 2. Transfer Characteristics [A] ID , D...
Description Advanced Power MOSFET

File Size 268.83K  /  7 Page

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    2SK2677

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2677
OCR Text ...= 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case V...0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2677 100 Static Drain-Source On-state Resist...
Description HVX-2 Series Power MOSFET(900V 10A)

File Size 417.58K  /  12 Page

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    2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608

FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608
OCR Text ...C = = = = *4 VDS < 200V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltag...0.15 0.88 Min. 200 3.0 Typ. Max. 5.0 25 250 100 170 1155 165 7.5 18 3.9 33 9.2 31.5 12 7....
Description    N-CHANNEL SILICON POWER MOSFET
N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 120.72K  /  4 Page

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    APT5024AVR

ADPOW[Advanced Power Technology]
Part No. APT5024AVR
OCR Text ...e-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com B...0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNI...
Description POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.55K  /  4 Page

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HVR
OCR Text ...e-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com B...0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNI...
Description POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.64K  /  4 Page

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    APT50M50 APT50M50PVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50 APT50M50PVR
OCR Text ...e-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) APT Website - http://www.advancedpower.com Ben...0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNI...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 74.5A 0.050 Ohm

File Size 35.96K  /  2 Page

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    APT8058HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8058HVR
OCR Text ...e-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com B...0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNI...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 13.5A 0.580 Ohm

File Size 60.35K  /  4 Page

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...e-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com B...0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNI...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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For -30v-0.5a Found Datasheets File :: 12053    Search Time::6.969ms    
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