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Infineon Technologies A...
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| Part No. |
IPU60R2K1CE
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| OCR Text |
...60s2k1ce see appendix a tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosacep...9a, r g =12.2 w ;seetable10 rise time t r - 7 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 ... |
| Description |
600V CoolMOSa CE Power Transistor
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| File Size |
1,426.62K /
14 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IPU60R2K0C6
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| OCR Text |
...tor ipu60r2k0c6 datasheet rev.2.2 final industrial&multimarket
2 600vcoolmos?c6powertransistor ipu60r2k0c6 rev.2.2,2015-10-09 f...9a, r g =12.2 w (see table 9) rise time t r 7 ns turn-off delay time t d(off) 30 ns fall time t f ... |
| Description |
Metal Oxide Semiconductor Field Effect Transistor
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| File Size |
2,044.92K /
15 Page |
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it Online |
Download Datasheet |
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STMicroelectronics
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| Part No. |
STD10NM65N08 STP10NM65N STD10NM65N STF10NM65N STU10NM65N
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| OCR Text |
...48 < 0.48 < 0.48 < 0.48 ID
2 3
3 1 2
9A 9 A(1) 9A 9A
1
TO-220
IPAK
1. Limited only by maximum temperature allowed
3 1
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance... |
| Description |
N-channel 650 V, 0.43 Ω, 9 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
N-channel 650 V, 0.43 Ω, 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
N-channel 650 V, 0.43 ヘ, 9 A MDmesh⑩ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
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| File Size |
502.77K /
17 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
MJF18008
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| OCR Text |
...ing pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v...9a t c =125 ?? 0.7 0.8 v v besat-1 base-emitter saturation voltage i c =2a ;i b =0.2a ... |
| Description |
Silicon NPN Power Transistors
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| File Size |
35.20K /
3 Page |
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it Online |
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