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w diode Datasheet PDF File

For w diode Found Datasheets File :: 101746 Search Time::1.797ms
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				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...diode) Pulsed Source Current (Body diode) Q diode Forward Voltage Reverse Recovery Time Reverse Reco...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	... 300 2.4 -55 to 150 300 V A A V w w/C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) R...diode RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulse...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recov...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recov...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recov...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recov...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	... Units V A A V mJ A mJ V/ns w w/ C Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Av...diode Recovery dv/dt Total Power Dissipation (TC=25 C ) 56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 t...
Description	N-CHANNEL POwER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...25 C Derating Factor Insulation w ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o Value IRF530FI 1...diode Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Cur...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POwER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...-65 to 175 175 Unit V V V A A A w w/ o C V o C o C () Pulse width limited by safe operating area March 1998 1/5 IRF530FP THERM...diode Symbol I SD I SDM () V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Cur...
Description	N - CHANNEL ENHANCEMENT MODE POwER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB ...diode) Pulsed Source Current (Body diode) diode Forward Voltage Reverse Recovery Time Reverse Recov...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

For w diode Found Datasheets File :: 101746 Search Time::1.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |