...0 1 150 -55 ~ +150 1cm2
Unit v v v mA mA W C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2
EIAJ:SC-71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the bo...
...0 -40 -5 -3 25 150 -50~150 Unit v v v A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation voltage Current Gain Bandwidth Product Symbol ...
Description
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
...7 -1.0 0.5 150 -55 to +150 Unit v v v A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector...3 -1 0 -0.6 -1.0 -0.2 -0.4 -0.8 Base to Emitter voltage vBE (v) 25C vCE = -1 v DC Current transfer r...
...0 -1.5 0.9 150 -55 to +150 Unit v v v A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector...3 -2 -200 -1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (C) 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector ...
...4 -8 40 150 -55 to +150
Unit v v v A A W C C
2SB566(K), 2SB566A(K)
Electrical Characteristics (Ta = 25C)
2SB566(K) Item Collector to...3 3.0 2.5 Max -- -- -- -1 200 -- -1.0 -1.2 -- -- -- -- v v MHz s s s Unit v v v A Test conditions I ...
...-1.5 -1 750 150 -55 ~ +150 Unit v
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 vCBO...3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current C...
...(-)120 (-)5 (-)1 (-)2 1
Unit v v v A A W W
Tc=25C
Tj Tstg
8 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Para...3/4
2SB631, 631K/2SD600, 600K
Specifications of any and all SANYO products described or contai...
Description
NPN Epitaxial Planar Silicon Transistor 100v/120v, 1A Low-Frequency Power Amplifier Applications 100v/120v/ 1A Low-Frequency Power Amplifier Applications 100v/120v/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100v/120v, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100v/120v, 1A Low-Frequency Power Amplifier Applications(用于100v/120vA低频功率放大器应用的PNP硅外延平面型晶体
...00 -100 400 150 -55 ~ +150 Unit v v v mA mA mW C C
1:Base 2:Collector 3:Emitter
3
0.550.1
1.250.05
0.450.05
2
1
2.5
2.5
EIAJ:SC-71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff curre...
....550.1
0.450.05
1.250.05
v
3 2 1
emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
v v A A mW C C
1:Base 2:Collector 3...
Description
Silicon PNP epitaxial planer type(For low-power general amplification)
... -1 -2 0.9 150 -55 to +150 Unit v v v A A W C C
Electrical Characteristics (Ta = 25C)
2SB647 Item Collector to base breakdown voltage Co...3 -10 -30 -100 -300 -1,000 Collector Current IC (mA)
3
2SB647, 2SB647A
Saturation voltage vs....