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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SK2111
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Description |
N-Channel MOSFET Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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File Size |
94.84K /
1 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SK2110
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Description |
N-Channel MOSFET Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
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File Size |
94.81K /
1 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SC5342SF
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Description |
NPN Silicon Transistor Low collector saturation voltage enabling low-voltage operation.
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File Size |
66.68K /
1 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SB1302 SB1302
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Description |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
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File Size |
110.31K /
2 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SC5310
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Description |
NPN Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
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File Size |
119.99K /
2 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SC1622A
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Description |
NPN Silicon Epitaxial Transistor High DC current gain.Collector-base voltage VCBO 120 V
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File Size |
57.91K /
1 Page |
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it Online |
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ty Semiconductor Co., Ltd ty semicondutor
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Part No. |
1SS301
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Description |
Low forward voltage:VF(3) = 0.90 V(typ) Fast reverse recovery time:trr = 1.6 ns (typ) Ultra High Speed Switching Application
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File Size |
65.71K /
1 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
2SC3645
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Description |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
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File Size |
529.25K /
3 Page |
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it Online |
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ty semicondutor ty Semiconductor Co., Ltd
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Part No. |
FMMTL717
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Description |
Medium Power Transistor Very low equivalent on-resistance;RCE(sat)=160mU at 1.25A
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File Size |
179.17K /
2 Page |
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it Online |
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Price and Availability
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