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Infineon Technologies A...
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| Part No. |
IHW40T60 IHW40T60-13
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| OCR Text |
...or figure 9 . typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 5 . 6 ? , dynamic test circuit in figure e) figure 10 . typical switching times as a function of gate ... |
| Description |
IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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| File Size |
577.35K /
13 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IHW40N60R
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| OCR Text |
...-26 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t j =175c, v ce =400v, v ge =0/15v, r g(on) =5.6 w , r g(off) =5.6 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switching... |
| Description |
Reverse conducting IGBT
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| File Size |
2,019.82K /
15 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IHW40N60RF-15
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| OCR Text |
...-26 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =0/15v, r g(on) =5.6 w , r g(off) =5.6 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchin... |
| Description |
Powerful monolithic body diode with low forward voltage designed for soft commutation only
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| File Size |
1,989.07K /
15 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IHW40N135R3
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| OCR Text |
...80a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g(on) =7.5 w , r g(off) =7.5 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchin... |
| Description |
Reverse conducting IGBT with monolithic body diode
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| File Size |
1,860.54K /
15 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IHW40N120R3
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| OCR Text |
...80a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =600v, v ge =0/15v, r g(on) =7.5 w , r g(off) =7.5 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchin... |
| Description |
Reverse conducting IGBT with monolithic body diode
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| File Size |
1,853.91K /
15 Page |
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it Online |
Download Datasheet |
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Taiwan Memory Technolog...
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| Part No. |
T14L1024N-10W
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| OCR Text |
...eatures ? fast address access times : 10/12/15ns ? single 3.3v 0.3v power supply ? center power/ground pin configuration ? low power consumption : 110/105/100ma ? ttl i/o compatible ? 2.0v data retention mode ? automatic p... |
| Description |
128K X 8 HIGH SPEED CMOS STATIC RAM
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| File Size |
87.40K /
13 Page |
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it Online |
Download Datasheet |
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Taiwan Memory Technolog...
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| Part No. |
T14L1024A
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| OCR Text |
...eatures ? fast address access times : 10/12/15ns ? single 3.3v 0.3v power supply ? low power consumption : 110/105/100ma ? ttl i/o compatible ? 2.0v data retention mode ? automatic power-down when deselected ? available pa... |
| Description |
128K X 8 HIGH SPEED CMOS STATIC RAM
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| File Size |
85.93K /
12 Page |
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it Online |
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IQD Frequency Products ...
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| Part No. |
IQCM-200
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| OCR Text |
...a, 50g 11 ms half sinewave, 3 times in three mutually perpendicular axies vibration : iec 68-2-06 test fc , 10g, 0.75mm acceleration, 10hz to 500hz, 3 times in three mutually perpendicular axies manufacturing details esd level: ansi/esd... |
| Description |
OCXO Specification
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| File Size |
416.45K /
5 Page |
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it Online |
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Price and Availability
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