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Samsung
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| Part No. |
KM736V790
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| OCR Text |
...e KM736V790 is fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.
FAST ACCESS TIMES
PARAMETER Cycle Time Clock Acc... |
| Description |
128Kx36 Synchronous SRAM
From old datasheet system
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| File Size |
402.58K /
15 Page |
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Samsung Electronic
Samsung semiconductor
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| Part No. |
K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F K4F170412C-B K4F170412C K4F170412C-F K4F160411C K4F160411C-F K4F160412C K4F160412C-B K4F160412C-F K4F160411C-B50 K4F160411C-B60 K4F160411C-F50 K4F160412C-B50 K4F160412C-B60 K4F160412C-F50 K4F160412C-F60 K4F170411C-B50 K4F170411C-B60
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| OCR Text |
...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.
FEATURES
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| Description |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
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| File Size |
223.73K /
20 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K4M563233D
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| OCR Text |
...rds by 32 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, ... |
| Description |
8Mx32 Mobile SDRAM 90FBGA
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| File Size |
63.67K /
8 Page |
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Price and Availability
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