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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH64S72VJG-6 MH64S72VJG-5
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OCR Text |
... forFully synchronous operation referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Seq... |
Description |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
954.83K /
57 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH32S72PHB-6
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OCR Text |
...MHz Fully synchronous operation referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Seq... |
Description |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
579.00K /
40 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH32S64PHB-6 B99033
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OCR Text |
...MHz Fully synchronous operation referenced to clock rising edge 4-bank operation controlled by BA0,BA1(Bank Address) /CAS latency -2/3(programmable,at buffer mode) LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst type- Seq... |
Description |
From old datasheet system 2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
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File Size |
576.68K /
40 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH32S64PFJ-7L MH32S64PFJ-6 MH32S64PFJ-6L MH32S64PFJ-7
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OCR Text |
...ply Fully synchronous operation referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmabl... |
Description |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
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File Size |
686.40K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH32S64APFB-8 MH32S64APFB-7
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OCR Text |
...x.) Fully synchronous operation referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable)
FEATURES
Frequency -7,-7L -8,-8L 100MHz 100... |
Description |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
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File Size |
696.32K /
55 Page |
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it Online |
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IK Semiconductor
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Part No. |
IN74HC154A
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OCR Text |
... v cc dc suppl y vol t a ge (referenced t o gnd) -0.5 t o +7.0 v v in dc input vol t a ge (referenced t o gnd) -1.5 t o v cc +1.5 v v out dc output voltage (referenced to gnd) -0.5 to v cc +0.5 v i in dc input c u rrent... |
Description |
4-16 Decoder/Demultiplexer (3-State)
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File Size |
225.83K /
7 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH1S72CPG-15 MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG
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OCR Text |
...MHz Fully synchronous operation referenced to clock rising edge Dual bank operation controlled by BA(Bank Address) /CAS latency- 1/2/3(programmable) Burst length- 1/2/4/8(programmable) Burst type- sequential / interleave(programmable) Colum... |
Description |
From old datasheet system 75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
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File Size |
679.70K /
47 Page |
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it Online |
Download Datasheet |
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Price and Availability
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