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ASJ
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| Part No. |
YCN16
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| OCR Text |
...10k j - 5% y ? 20k z - zero ohm 3.0 rating 3.1 rated power table 1 (a) zero ohm jumper rated power type rated current dielectric withsta nding voltage resistance tolerance ycn10 1a 300v < 50 m ycn16 1a 300v < 50 m (b) resistor r... |
| Description |
(YCN16 / YCN10) Chip Resistor Network
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| File Size |
1,483.15K /
18 Page |
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it Online |
Download Datasheet
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SamHop
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| Part No. |
STS6604L
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| OCR Text |
...10v i d =1a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time v ds =10v,i d =4a,v gs =4.5v fall time turn-on delay time m ohm v gs =4.5v , i d =4a v ds =5v , i d =4a input capacitance output capacitance dynamic charact... |
| Description |
Dual Enhancement Mode Field Effect Transistor
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| File Size |
242.44K /
11 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
STS6601
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| OCR Text |
...0v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-30v,i d =-3.2a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-3.2a v ds =-10v , i d =-3.2a input capacitance output capacitance dyn... |
| Description |
Super high dense cell design for low RDS
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| File Size |
80.63K /
2 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STF2458
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| OCR Text |
... 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =5.0a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1.0ma v ds =20v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-b... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
97.45K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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