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    HS-117 HS-117RH 5962F9954701QYA HSYE-117RHPROTO HSYE-117RH-Q HSYE-117RH-8 HS9S-117RH-8 HS9S-117RHPROTO HS9S-117RH-Q 5962

Intersil, Corp.
Intersil Corporation
Part No. HS-117 HS-117RH 5962F9954701QYA HSYE-117RHPROTO HSYE-117RH-Q HSYE-117RH-8 HS9S-117RH-8 HS9S-117RHPROTO HS9S-117RH-Q 5962F9954701VXC 5962F9954701VYA 5962F9954701QXC
OCR Text ...emperature on device stability. negligible low dose rate sensitivity is achieved through the use of vertical transistor geometries. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, the HS-117RH is i...
Description 5.0 AMP POSITIVE VOLTAGE REGULATOR 5.0放大器正电压稳压
5.0 AMP POSITIVE VOLTAGE REGULATOR 1.2 V-37 V ADJUSTABLE POSITIVE REGULATOR, MSFM3
Radiation Hardened Adjustable Positive Voltage Regulator

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    2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15

International Rectifier
Part No. 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15
OCR Text ... A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per N Channel Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units -- -- 125 C/W Test Conditions Typic...
Description RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements

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    IRHLG7670Z4

International Rectifier
Part No. IRHLG7670Z4
OCR Text ... A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units -- -- 125 C/W Test Conditions Typical socket ...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)

File Size 309.28K  /  16 Page

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    VRE20207 VRE202C VRE202CA VRE202M VRE202MA VRE204 VRE204C VRE204MA VRE210C VRE210M VRE210MA VRE210CA VRE204CA

List of Unclassifed Manufacturers
Part No. VRE20207 VRE202C VRE202CA VRE202M VRE202MA VRE204 VRE204C VRE204MA VRE210C VRE210M VRE210MA VRE210CA VRE204CA
OCR Text ... network resistance so it has a negligible effect on long term stability. By using highly stable resistors in our network, we produce a voltage reference that also has very good long term stability. APPLICATION INFORMATION Figure 2 show...
Description Precision Surface Mount Reference Supplies

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    IRHLA7670Z4

International Rectifier
Part No. IRHLA7670Z4
OCR Text ... A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units -- -- 210 C/W Test Conditions Typical socket ...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK)

File Size 316.29K  /  16 Page

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    ATC18RHA08

ATMEL Corporation
Part No. ATC18RHA08
OCR Text ...VCCB is "off" these pads have a negligible leakage current. Furthermore standard IO33 pads (PCI,LVDS,LVPECL excepted) are tolerant. This means that when * * * the pad is configured as an input VCCB is < 3.3V (ex 2.5V) The external signal ca...
Description Rad. Hard 0.18 μm CMOS Cell-based ASIC for Space Use
Rad. Hard 0.18 楼矛m CMOS Cell-based ASIC for Space Use

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    SP-201505LF

IRC - a TT electronics Company.
Part No. SP-201505LF
OCR Text ...eg 700 V 450V 120C @ 1 watts 5% negligible PR 10,000 Meg 100 Meg 700 V 450 V 120C @ 1 watts 5% negligible 1. Resistive Element All resistor types have resistance alloy winding on a braided fiberglass substrate. Intermediate silicone coat...
Description GENERAL-PURPOSE FAILSAFE MOLDED WIREWOUND RESISTOR

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    SP-201505LF08

IRC - a TT electronics Company.
Part No. SP-201505LF08
OCR Text ...Meg 700V 450V 120C @ 1 watts 5% negligible PR 10,000 Meg 100 Meg 700V 450V 120C @ 1 watts 5% negligible Hotspot Temperature Rise Typical Load Life Current Noise General Note IRC reserves the right to make changes in product spe...
Description General Purpose Failsafe Molded Wirewound Resistor

File Size 211.71K  /  3 Page

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    STPSC10H12D

STMicroelectronics
Part No. STPSC10H12D
OCR Text ...data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? robust high voltage periphery description the sic diode, available in to - 220ac, is an ultrahigh performance power...
Description    1200 V power Schottky silicon carbide diode

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    STPSC606 STPSC606D STPSC606G-TR

STMicroelectronics
Part No. STPSC606 STPSC606D STPSC606G-TR
OCR Text negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide su...
Description 6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
600 V power Schottky silicon carbide diode

File Size 87.17K  /  8 Page

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