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For n-p-n Found Datasheets File :: 246722 Search Time::9.047ms
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				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	...ntegral reverse --- --- 700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.i...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...ntegral reverse --- --- 140 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS =22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	... integral reverse --- --- 140 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	... showing the integral reverse p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1404L IRF1404S
OCR Text	...ntegral reverse --- --- 650 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 95A, VGS = 0V --- 71 110 ns TJ = 25C, IF = 95A --- 180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Re...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
File Size	237.30K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...ntegral reverse --- --- 650 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 95A, VGS = 0V --- 71 110 ns TJ = 25C, IF = 95A --- 180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitiv...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...ntegral reverse --- --- 680 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 101A, VGS = 0V --- 88 130 ns TJ = 25C, IF = 101A --- 250 380 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...ntegral reverse --- --- 680 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 101A, VGS = 0V --- 88 130 ns TJ = 25C, IF = 101A --- 250 380 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetit...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...ntegral reverse --- --- 520 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 78A, VGS = 0VT --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s TX Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repet...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...ntegral reverse --- --- 520 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 78A, VGS = 0VT --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repeti...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

For n-p-n Found Datasheets File :: 246722 Search Time::9.047ms
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