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  line variable Datasheet PDF File

For line variable Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    SN74LS147-D

ON Semiconductor
Part No. SN74LS147-D
Description 10-line-to-4-line and 8-line-to-3-line Priority Encoders

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    SN74LS147D

Motorola, Inc
Part No. SN74LS147D
Description 10-line-TO-4-line AND 8-line-TO-3-line PRIORITY ENCODERS

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    HVB350BYP

Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
Part No. HVB350BYP
Description Silicon Epitaxial Planar variable Capacitance Diode for VCO
16.25 pF, SILICON, variable CAPACITANCE DIODE CMPAK-4

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    HM628512C HM628512CLFP-5 HM628512CLFP-5SL HM628512CLFP-7 HM628512CLFP-7SL HM628512CLP-5 HM628512CLP-5SL HM628512CLP-7 HM

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HM628512C HM628512CLFP-5 HM628512CLFP-5SL HM628512CLFP-7 HM628512CLFP-7SL HM628512CLP-5 HM628512CLP-5SL HM628512CLP-7 HM628512CLP-7SL HM628512CLRR-5 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLRR-7SL HM628512CLTT-5 HM628512CLTT-5SL HM628512CLTT-7 HM628512CLTT-7SL
Description 4 M SRAM (512-kword x 8-bit) 四米的SRAM12 - KWord的8位)
Quadruple 2-line To 1-line Data Selectors/Multiplexers 16-CDIP -55 to 125
Octal Buffers And line Drivers With 3-State Outputs 20-CFP -55 to 125

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    Integrated Device Technology, Inc.
Part No. IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162374CTPAB IDT54FCT162374ETPAB IDT54FCT162374ATPAB IDT54FCT162374ATPVB IDT54FCT16374CTPAB IDT54FCT16374ETPAB IDT54FCT16374CTPV IDT54FCT162374TEB IDT54FCT16374CTPF IDT54FCT162374TPFB IDT54FCT162374ATEB IDT54FCT16374ATPAB IDT54FCT162374ETPV IDT54FCT16374ETE IDT54FCT162374CTPVB IDT54FCT162374CTPFB
Description FAST CMOS 16-BIT REGISTER (3-STATE)
variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6

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    GSI Technology, Inc.
Part No. G331-8I-20 SG222-6I-20 G561-8I-20 G271-8I-20 SG682-6I-20 G104-3F-20 SG821-8I-20
Description UNSHIELDED, 0.24 uH - 0.33 uH, variable INDUCTOR
UNSHIELDED, 1.5 uH - 2.2 uH, variable INDUCTOR
UNSHIELDED, 0.4 uH - 0.56 uH, variable INDUCTOR
UNSHIELDED, 0.19 uH - 0.27 uH, variable INDUCTOR
UNSHIELDED, 4.5 uH - 6.8 uH, variable INDUCTOR
UNSHIELDED, 50 uH - 100 uH, variable INDUCTOR
UNSHIELDED, 0.59 uH - 0.82 uH, variable INDUCTOR

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    ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV832BTA ZV832BV2TA ZMV835ATA ZMV835BTA ZMDC832BTA ZMV833ATA ZMV833BTA Z

ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
Part No. ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV832BTA ZV832BV2TA ZMV835ATA ZMV835BTA ZMDC832BTA ZMV833ATA ZMV833BTA ZMV829ATA ZDC834ATA ZC832ATA ZMV829 ZMV830ATA ZMV830BTA ZMV834ATA ZMV834BTA ZMDC830 ZMDC831BTA ZC829 ZC829ATA ZC829BTA ZC830ATA ZC830BTA ZC831ATA ZC831BTA ZC832BTA ZC833ATA ZC833BTA ZC834ATA ZC834BTA ZC835ATA ZC835BTA ZC836ATA ZC836BTA ZDC833 ZDC833ATA ZMV829BTA 830 ZC831B ZMDC831B ZMV831B ZV831BV2 ZMV830A ZMV830B ZV832BV2 ZC830A 829B ZC821 835A 834B 830B 836B ZC820 ZC826 ZC822 ZC823 ZC824 ZC825 ZMV829A ZMV829B 836A 832B 831A 834A 833A 833B ZC829A ZC829B ZMV833B ZMV832B ZMV832A ZMV831A
Description    SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, variable CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT variable CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
   SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

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    XE1050 XE1060 XE1030 XE1040 XE1080 XE1070 XE1.80

XECOM
ETC[ETC]
List of Unclassifed Manufacturers
Part No. XE1050 XE1060 XE1030 XE1040 XE1080 XE1070 XE1.80
Description Single-in-line telephone line intrface for Europe (Italy).
From old datasheet system
Single In-line Telephone line Interfaces for Europe

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    AV850M1-00

Alpha Industries Inc
Alpha Industries, Inc.
Part No. AV850M1-00
Description 180 GHz GaAs MMIC Voltage variable Attenuator
18-50 GHz GaAs MMIC Voltage variable Attenuator
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-1 RoHS Compliant: No

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    MACOM[Tyco Electronics]
Part No. AT-354PIN AT-332 AT-337 AT-354 AT332
Description Voltage variable Absorptive Attenuator DC2 GHz
(AT-332 / AT-337) Voltage variable Absorptive Attenuator DC - 2 GHz
DC-2 GHz, voltage variable absorptive attenuator

File Size 113.32K  /  2 Page

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For line variable Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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