i-98 62 pdf Datasheet P14 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 1215E V251HB34 B24A15R TCA62 SPT1175 LBS14059 203299 N4744
	Product Description
	Full Text Search

i-98 62 Datasheet PDF File

For i-98 62 Found Datasheets File :: 15329 Search Time::1.437ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				PANJIT[Pan Jit International Inc.] PanJit International Inc. http:// Pan Jit International I...
Part No.	3EZ150 3EZ180 3EZ160 3EZ82 3EZ51 3EZ100 3EZ11 3EZ110 3EZ12 3EZ120 3EZ130 3EZ14 3EZ140 3EZ15 3EZ16 3EZ17 3EZ170 3EZ18 3EZ19 3EZ190 3EZ20 3EZ200 3EZ22 3EZ24 3EZ27 3EZ28 3EZ30 3EZ33 3EZ36 3EZ39 3EZ43 3EZ47 3EZ56 3EZ62 3EZ68 3EZ75 3EZ91 3EZ13
OCR Text	... V Z @ IZT V IZT mA M a x i m u m Ze n e r I m p e d a n c e ZZT @ IZT ZZK @ IZK Oh ms Oh ms IZK mA Leakage Current IR u A Ma x VR ...98.8 106.4 114 121.6 130.4 136.8 144.8 152.0 225 246 208 193 180 169 150 159 142 135 123 112 100 96 ...
Description	surface mount silicon Zener diodes GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)
File Size	458.82K / 4 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1
OCR Text	...0 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, io...98 Typical INA-02184 Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA) Freq. GHz S11 Mag An...
Description	GT 10C 10#16 PIN PLUG 低噪声，可级联硅双极MMIC放大 GT 10C 10#16 SKT PLUG Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise Cascadable Silicon Bipolar MMIC Amplifier
File Size	63.07K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2113
OCR Text	... LO. Symbol VIH VIL VOH VOL I LK I QBS I QCC I QDD IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVI O+ I O- Parameter Definition Logic "1" Input Vo...98 X 126 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole ...
Description	HIGH AND LOW SIDE DRIVER
File Size	388.64K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7301 IRF7301TR
OCR Text	...7V, ID = 2.2A --- V VDS = VGS, I D = 250A --- S VDS = 15V, ID = 2.6A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 125 C 100 V GS ...98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 ...
Description	FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.86K / 9 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRF7303 IRF7303TR
OCR Text	...Conditions --- --- V V GS = 0V, I D = 250A 0.032 --- V/C Reference to 25C, I D = 1mA --- 0.050 VGS = 10V, I D = 2.4A --- 0.080 VGS = 4.5V,...98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 ...
Description	Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
File Size	107.34K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7306 IRF7306TR IRF7306TRPBF
OCR Text	...ute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 25C I D @ TA = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Curre...98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X ...
Description	Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.78K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7313 IRF7313TR
OCR Text	...nce RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 1.0 Typ. 0.022 0.023 0...98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X ...
Description	30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	542.53K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7314
OCR Text	...emperature. ( See fig. 11 ) I -2.9A, di/dt -77A/s, VDD V(BR)DSS, SD TJ 150C Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.9A. ...98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X ...
Description	HEXFET Power MOSFET
File Size	138.29K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7328 IRF7328TR
OCR Text	...IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junctio...98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4)...
Description	HEXFET Power MOSFET -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	106.75K / 8 Page	View it Online	Download Datasheet

				KEC Holdings KEC[KEC(Korea Electronics)]
Part No.	KIC7WZ14FK
OCR Text	...1. AC Test Circuit FIGURE 2. I CCD Test Circuit t r =3ns t f =3ns 90% 50% 10% tw VCC INPUT GND t PLH t PHL VOH OUTPUT 50% 50% VOL FIGURE 3. AC Waveforms 2003. 3. 11 Revision No : 1 4/4
Description	SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT (SCHMITT INVERTER) 硅单片CMOS数字集成电路（施密特逆变器）
File Size	400.76K / 4 Page	View it Online	Download Datasheet

For i-98 62 Found Datasheets File :: 15329 Search Time::1.437ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |