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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. iRF3415L iRF3415S
OCR Text ...atings and Characteristics iS i SM V SD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Di...u.T. + RG i D , Drain Current (A) -V DD 30 10V Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. iRF3415
OCR Text ...TTOM 4.5V TOP 1000 100 i D , Drain-to-Source Current (A) i D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5....u.T. + RG i D , Drain Current (A) -VDD 30 10V Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm id=43A)

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. iRF3515L iRF3515S
OCR Text ...6.0V BOTTOM 5.0V TOP 1000 i D , Drain-to-Source Current (A) 100 10 i D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V ...u.T. + RG i D , Drain Current (A) -VDD 30 10V Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, id=41A)

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    BE24-1B72-VDE

Meder Electronic
Part No. BE24-1B72-VDE
OCR Text i k e l : v o r l ? u f i g e s d a t e n b l a t t | e m a i l : s a l e s a s i a @ m e d e r . c o m 8 8 2 4 1 7 2 5 0 0 + 8 5 2 / 2 9 5 5 1 6 8 2 a s i a : | e m a i l : s a l e s u s a @ m e d e r . c o m + 1 / 5 0 ...
Description (deutsch) BE Reed Relay

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    IRF3703 IRF3703PBF

International Rectifier
Part No. iRF3703 iRF3703PBF
OCR Text ...J Diode Characteristics iS i SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)...u.T. + i D , Drain Current (A) 160 -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 120...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ id=210A)

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. iRF3704 iRF3704L iRF3704S iRF3704STRL iRF3704STRR
OCR Text ...ce (Normalized) iD = 77A i D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 1.5 100 1.0 0.5 10 3.0 V D...u.T. + i D , Drain Current (A) -VDD 60 10V 45 Pulse Width 1 s Duty Factor 0.1 % ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ id=77A)
CONNECTOR, PiCOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSiSTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A i(D) | TO-263AB

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. iRF3706 iRF3706L iRF3706S
OCR Text ...Symbol VDS VGS iD @ TC iD @ TC i DM PD @TC PD @TC Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @...u.T. + i D , Drain Current (A) 60 RG -VDD 4.5V 40 Pulse Width 1 s Duty Factor 0....
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm id=77A)

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. iRF3707 iRF3707L iRF3707S iRF3707PBF iRF3707STRL iRF3707STRR
OCR Text ..., iS = 31A, VGS = 0V TJ = 25C, i F = 31A, VR=20V di/dt = 100A/s TJ = 125C, iF = 31A, VR=20V di/dt = 100A/s 2 www.irf.com iRF3707...u.T. + i D , Drain Current (A) 50 -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ id=62A)

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. iRF3708 iRF3708L iRF3708S
OCR Text ...GS = 10V, iD = 15A VGS = 4.5V, i D = 12A VGS = 2.8V, iD = 7.5A VDS = VGS, iD = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VG...u.T. + i D , Drain Current (A) 50 -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ id=62A)

File Size 137.00K  /  10 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. iRF3709 iRF3709L iRF3709S iRF370B9L iRF370B9S F3709S
OCR Text ... iRF3709/3709S/3709L 1000 i D , Drain-to-Source Current (A) 100 i D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5...u.T. + RG i D , Drain Current (A) -VDD 60 VGS Pulse Width 1 s Duty Factor 0.1 % ...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, id=90A??

File Size 120.60K  /  11 Page

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