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				NEC
Part No.	3SK177 3SK177-T1 3SK177-T2
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	For UHF TV tuner high frequency amplification RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
File Size	57.96K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor] RENESAS[Renesas Electronics Corporation]
Part No.	M56750FP REJ03F0049M56750FP REJ03F0049_M56750FP
OCR Text	...chnology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or prope...
Description	3-PHASE BRUSHLESS MOTOR DRIVER ASSP>Motor Drivers>Motor Drivers for LBP/IJP/FAX/PPC/FA
File Size	117.26K / 9 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	PS2805 PS2805-1 PS2805-1-F3 PS2805-1-F4 PS2805-4 PS2805-4-F3 PS2805-4-F4
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER
File Size	133.57K / 12 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC] http://
Part No.	RD12MW RD2.4MW RD7.5MW RD4.3MW RD24MW RD4.7MW RD8.2MW RD6.8MW RD2.7MW RD5.6MW RD3.3MW RD33MW RD9.1MW RD27MW RD2.2MW RD18MW RD3.6MW RD6.2MW RD22MW RD5.1MW RD36MW RD2.0MW RD3.0MW RD20MW RD16MW RD10MW RD13MW RD15MW RD3.9MW RD30MW RD39MW RD11MW
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	ZENER DIODES 200 mW 3-PIN MINI MOLD surface mount silicon Zener diodes 表面贴装硅稳压二极管 CA-BAYONET
File Size	64.03K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	RD12M RD2.4M RD7.5M RD4.3M RD24M RD4.7M RD8.2M RD6.8M RD47M RD2.7M RD5.6M RD3.3M RD33M RD9.1M RD2.2M RD18M RD3.6M RD6.2M RD5.1M RD2.0M RD36M RD3.9M RD3.0M RD30M RD13M RD27M RD10M RD11M RD43M RD22M RD16M RD39M RD20M RD15M RD10M-T2B RD11M-T2B RD13M-L RD3.3M-L RD33M-L RD4.3M-L RD43M-L RD12M-T1B RD2.2M-T1B RD22M-T1B RD6.2M-T1B RD8.2M-T1B RD3.0M-L RD2.0M-T1B RD3.0M-T2B RD6.2M-L RD2.2M-T2B RD2.0M-T2B RD2.2M-L RD8.2M-L RD8.2M-T2B RD4.3M-T1B RD7.5M-T1B RD6.2M-T2B RD3.0M-T1B RD4.3M-T2B RD2.0M-L RD3.3M-T2B RD4.7M-T1B RD2.7M-L RD4.7M-L RD3.6M-L RD3.6M-T2B RD5.6M-L RD5.6M-T1B RD7.5M-T2B RD2.7M-T1B RD5.6M-T2B RD4.7M-T2B RD7.5M-L RD3.6M-T1B RD3.3M-T1B RD2.7M-T2B RD47M-T2B RD47M-L RD47M-T1B RD30M-T2B RD20M-T2B RD10M-L RD20M-L RD30M-L RD11M-T1B RD5.1M-T1B RD5.1M-T2B RD9.1M-T1B RD9.1M-T2B RD11M-L RD5.1M-L RD9.1M-L RD12M-L RD22M-L RD2.4M-L RD2.4M-T1B RD2.4M-T2B RD3.9M-T2B RD6.8M-L RD6.8M-T1B RD3.9M-L RD3.9M-T1B RD6.8M-T2B RD13M-T2B RD33M-T2B RD43M-T2B RD33M-T1B RD43M-T1B RD13M-T1B RD24M-L RD15M-L RD15M-T2B RD15M-T1B RD12M-T2B RD22M-T2B RD27M-L RD27M-T1B RD27M-T2B RD18M-L RD18M-T2B RD24M-T1B RD24M-T2B RD16M-L RD36M-L RD16M-T1B RD16M-T2B RD36M-T1B RD36M-T2B RD39M-T1B RD39M-T2B RD39M-L RD4.3MB
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	ZENER DIODES 200 mW 3-PIN MINI MOLD 4.245 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE surface mount silicon Zener diodes 表面贴装硅稳压二极管 CACOMB 3C 3#8 SKT RECP Dual type Constant Voltage diode 200mW 3pin SC-59
File Size	65.78K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1715 UPA1715G PA1715
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	MOS Field Effect Transistor SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	65.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	64.80K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	UPA611TA PA611TA D11707EJ1V0DS00
OCR Text	...tion has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING From old datasheet system
File Size	50.75K / 8 Page	View it Online	Download Datasheet

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