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For cbo Found Datasheets File :: 25162    Search Time::2.562ms    
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    4N25 4N26 4N28 4N27 4N25A

Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. 4N25 4N26 4N28 4N27 4N25A
OCR Text ... ICEO ICEO Icbo V(BR)CEO V(BR)cbo V(BR)ECO hFE CCE CCB CEB IC (CTR)(2) -- -- -- -- 30 70 7 -- -- -- -- 1 1 1 0.2 45 100 7.8 500 7 19 9 50 100 -- -- -- -- -- -- -- -- -- nA A nA Volts Volts Volts -- pF pF pF mA (%) 2 (20) 1 ...
Description 6-Pin DIP Optoisolators Transistor Output

File Size 280.78K  /  6 Page

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    BLV2045N

NXP Semiconductors
Philips Semiconductors
Part No. BLV2045N
OCR Text ...therwise specified. SYMBOL V(BR)cbo V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (...
Description UHF power transistor

File Size 75.44K  /  12 Page

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    FMMT489

ZETEX[Zetex Semiconductors]
Part No. FMMT489
OCR Text ... Breakdown Voltages SYMBOL V(BR)cbo VCEO(sus) V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio...
Description NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

File Size 42.30K  /  1 Page

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    M4N25

MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. M4N25
OCR Text ... ICEO ICEO Icbo V(BR)CEO V(BR)cbo V(BR)ECO CCE CCB CEB IC (CTR)(2) VCE(sat) ton toff tr tf VISO RISO CISO -- -- -- 30 70 7 -- -- -- 1 1 0.2 45 100 7.8 7 19 9 50 -- -- -- -- -- -- -- -- nA A nA Volts Volts Volts pF pF pF 2 (...
Description    6-Pin DIP Optoisolators Transistor Output

File Size 138.00K  /  8 Page

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    MUN5216T1 MUN5211T1 MUN5215T1 MUN5213T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5212T1 MUN5214T1 ON2726 MUN

Motorola, Inc.
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
Part No. MUN5216T1 MUN5211T1 MUN5215T1 MUN5213T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5212T1 MUN5214T1 ON2726 MUN52XXT1
OCR Text ...) (IC = 2.0 mA, IB = 0) V(BR)cbo V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 hFE 35...
Description NPN SILICON BIAS RESISTOR TRANSISTORS
From old datasheet system

File Size 230.94K  /  12 Page

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    MUN5216 MUN5216DW1T1 MUN5211 MUN5215 MUN5215DW MUN5215DW1T1 MUN5213 MUN5213DW1T1 MUN5230 MUN5230DW1T1 MUN5231 MUN5231DW1

ONSEMI[ON Semiconductor]
Part No. MUN5216 MUN5216DW1T1 MUN5211 MUN5215 MUN5215DW MUN5215DW1T1 MUN5213 MUN5213DW1T1 MUN5230 MUN5230DW1T1 MUN5231 MUN5231DW1T1 MUN5232 MUN5232DW1T1 MUN5233 MUN5234 MUN5234DW1T1 MUN5235 MUN5235DW1 MUN5235DW1T1 MUN5212 MUN5212DW1T1 MUN5214 MUN5214DW1T1 MUN5211DW1T1 MUN52XXDW1T1 MUN5233DW1T1 MUN5236DW1T1 MUN5237DW1T1 MUN5211DW1 MUN5212DW1 MUN5214DW1 MUN5231DW1
OCR Text ...00 s, Duty Cycle < 2.0% V(BR)cbo V(BR)CEO Vdc Vdc http://onsemi.com 2 MUN5211DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit ...
Description Dual Bias Resistor Transistors

File Size 151.63K  /  20 Page

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    BCP56T1 BCP56T1SERIES

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. BCP56T1 BCP56T1SERIES
OCR Text ...nt (VEB = 5.0 Vdc, IC = 0) V(BR)cbo V(BR)CEO V(BR)EBO Icbo IEBO 100 80 5.0 -- -- -- -- -- -- -- -- -- -- 100 10 Vdc Vdc Vdc nAdc Adc ON CHARACTERISTICS (2) DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Pa...
Description MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 中功率NPN硅高当前的晶体管表面贴装

File Size 200.38K  /  6 Page

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    BCX69 BCX69-25 BCX69-16 BCX6916

ZETEX[Zetex Semiconductors]
ZETEX PLC
Part No. BCX69 BCX69-25 BCX69-16 BCX6916
OCR Text ...rage Temperature Range SYMBOL V cbo V CEO V EBO I CM IC P tot T j:T stg VALUE -25 -20 -5 -2 -1 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown volta...
Description Obsolete
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%

File Size 16.34K  /  1 Page

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    BFG10W BFG10X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFG10W BFG10X
OCR Text ...herwise specified). SYMBOL V(BR)cbo V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain collector capacita...
Description UHF power transistor

File Size 58.33K  /  9 Page

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    BFS17H BFS17L

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. BFS17H BFS17L
OCR Text ...rage Temperature Range SYMBOL V cbo V CEO V EBO I CM IC P tot T j:T stg VALUE 25 15 2.5 50 25 330 -55 to +150 UNIT V V V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector Cut-Off Current Static Forward Current T...
Description NPN RF Transistor
SOT23 NPN SILICON PLANAR RF TRANSISTORS

File Size 42.87K  /  2 Page

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For cbo Found Datasheets File :: 25162    Search Time::2.562ms    
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