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  avalanche Datasheet PDF File

For avalanche Found Datasheets File :: 34943    Search Time::1.188ms    
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    2SJ547

HITACHI[Hitachi Semiconductor]
Part No. 2SJ547
OCR Text ...ce to Drain Voltage -10 Maximum avalanche Energy vs. Channel Temperature Derating Repetitive avalanche Energy EAR (mJ) 10 I AP = -10 A V DD = -25 V duty < 0.1 % Rg > 50 Reverse Drain Current I DR (A) -8 8 -6 -10 V -4 -5 V...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.45K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -15 19 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...ce to Drain Voltage Repetitive avalanche Energy E AR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 20 I AP = -12 A V DD = -25 V duty < 0.1 % Rg > 50 -10 Reverse Drain Current I DR (A) -8 16 -6 -10 V -4 V G...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ550 2SJ550L 2SJ550S

HITACHI[Hitachi Semiconductor]
http://
Part No. 2SJ550 2SJ550L 2SJ550S
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -15 19 50 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.48K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -18 27 60 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -20 34 75 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -30 77 75 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -45 173 100 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -60 308 125 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ...ipation (Tc = 25C) Single pulse avalanche energy (Note 2) avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.36 g (typ.) Thermal Characteristics Characteris...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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For avalanche Found Datasheets File :: 34943    Search Time::1.188ms    
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Price and Availability




 
Price & Availability of avalanche
TTI

Part # Manufacturer Description Price BuyNow  Qty.
BYG23M-E3/TR
BYG23M-E3/TR
Vishay Intertechnologies Rectifiers RECOMMENDED ALT BYG23M-E3/TR3 1800: USD0.102
3600: USD0.1
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1N5625-TR
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Vishay Intertechnologies Rectifiers 3.0 Amp 400 Volt 2500: USD0.412
12500: USD0.36
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BYV26E-TR
BYV26E-TR
Vishay Intertechnologies Rectifiers 1.0 Amp 1000 Volt 30 Amp IFSM 5000: USD0.225
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1N5627-TR
1N5627-TR
Vishay Intertechnologies Rectifiers 3.0 Amp 800 Volt 2500: USD0.414
5000: USD0.4
12500: USD0.39
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25000
BYG22D-E3/TR
BYG22D-E3/TR
Vishay Intertechnologies Rectifiers 2.0 Amp 200 Volt 14 1800: USD0.112
3600: USD0.109
5400: USD0.107
9000: USD0.105
27000: USD0.098
BuyNow
25200

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