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Infineon
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Part No. |
SIDC56D170E6
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OCR Text |
...t rr2 di/dt=1100a/ m s v r =900v t j = 150 c ns i rrm1 t j = 25 c 55 peak recovery current i rrm2 i f =75a di/dt=1100a/ m s v r =900v t j = 150 c 85 a q rr1 t j =25 c 9 reverse re... |
Description |
Diodes - HV Chips - SIDC56D170E6, 1700V, 75A
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File Size |
65.09K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGPF40F
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OCR Text |
... C
Fast Speed IGBT
VCES = 900v VCE(sat) 3.3V
@VGE = 15V, I C = 17A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v,@Vge=15V, Ic=17A)
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File Size |
222.15K /
6 Page |
View
it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STP5NC90ZFP STB5NC90ZT4
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OCR Text |
900v - 2.1 w - 4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate ... |
Description |
N-CHANNEL 900v 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
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File Size |
521.94K /
13 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGPF30F
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OCR Text |
... C
Fast Speed IGBT
VCES = 900v VCE(sat) 3.7V
@VGE = 15V, I C = 11A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)
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File Size |
219.70K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGPF20F
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OCR Text |
... C
Fast Speed IGBT
VCES = 900v VCE(sat) 4.3V
@VGE = 15V, I C = 5.3A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=5.3A)
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File Size |
223.56K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGBF30F IRGBF30
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OCR Text |
... C
Fast Speed IGBT
VCES = 900v VCE(sat) 3.7V
@VGE = 15V, IC = 11A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transi... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)
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File Size |
217.06K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGBF20F IRGBF20
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OCR Text |
... C
Fast Speed IGBT
VCES = 900v VCE(sat) 4.3V
@VGE = 15V, I C = 5.3A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900v, @Vge=15V, Ic=5.3A)
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File Size |
218.25K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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