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74AC11 00121 CXXXX 09032 NT640C AOT460 180MB E13003T
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  80v 5a Datasheet PDF File

For 80v 5a Found Datasheets File :: 2772    Search Time::2.563ms    
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    NTE[NTE Electronics]
Part No. NTE184 NTE185
OCR Text .... . . . . . . . . . . . . . . . 80v Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...5a, VCE = 2V IC = 4A, VCE = 2V Collector-Emitter Saturation Voltage IC = 1.5a, IB = 0.15a IC = 4A, I...
Description Silicon Complementary Transistors Audio Power Amp, Switch
Silicon Complementary Transistors Audio Power Amp / Switch

File Size 21.55K  /  2 Page

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    2N7609U8 IRHLNM73110

International Rectifier
Part No. 2N7609U8 IRHLNM73110
OCR Text ...ge drain current ? ? 1.0 v ds = 80v ,v gs =0v ??10 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs =...5a q gs gate-to-source charge ? ? 4.0 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 6.0 t ...
Description Power MOSFET

File Size 192.98K  /  9 Page

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    Advanced Power Electronics
Part No. AP18T10GP-HF-3
OCR Text ...in-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss ga...5a - 10 16 nc q gs gate-source charge v ds =80v - 2.5 - nc q gd gate-drain ("miller") charge v gs =1...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 83.92K  /  5 Page

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    IRHE9130

International Rectifier
Part No. IRHE9130
OCR Text ... drain current ? ? -25 v ds = -80v,v gs = 0v ? ? -250 v ds = -80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v...5a q gs gate-to-source charge ? ? 10 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 25 t d...
Description Simple Drive Requirements

File Size 165.50K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTB011N10RQ8 MTB011N10RQ8-0-T3-G
OCR Text ... v gs = 2 20v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 7.5 11 v gs =10v, i d =11.5a *r ds(on) - 9.8 14 m v gs =4.5v, i d =9.5a dynamic qg *1, 2 - 69.2 - qgs *1, ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 430.07K  /  9 Page

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    2SC3552

Hitachi,Ltd.
WINGS[Wing Shing Computer Components]
Part No. 2SC3552
OCR Text ... 4.5a IC=4.5a,IB1=-IB2=0.8A,VCC=80v 1.5 0.3 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Col...
Description ECONOLINE: RSZ/P - 1kVDC ECONOLINE:RSZ / P - 1kVDC 2kVDC隔离UL94V - 0封装材料所需的散热片,无外置。组件所需的环形磁ContinuousShort电路保护 P的后缀
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 79.43K  /  1 Page

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    Inchange Semiconductor ...
Part No. BUX77
OCR Text ...ng voltage- : v ceo(sus) = 80v(min) applications designed for use in switching regulators and general purpose power amplifiers...5a; i b = 0.5a 1.0 v v be( on ) base-emitter on voltage i c = 5a; i b = 0.5a 1.3 v i ce...
Description isc Silicon NPN Power Transistor

File Size 207.34K  /  2 Page

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    FS10KM-3

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KM-3
OCR Text ... Reverse recovery time VDD = 80v, ID = 5a, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- -- IS = 5a, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W...
Description HIGH-SPEED SWITCHING USE

File Size 39.88K  /  4 Page

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