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Renesas
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| Part No. |
M6MGB64BM34CWG M6MGT64BM34CWG
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| OCR Text |
...nts 64m - bit flash memory and 32m - bit mobile ram in a 67 - pin stacked csp for lead free use. 64m - bit flash memory is a 4,194,304 wor...word by 16 - bit) cmos flash memory & 33,554,432 - bit (2,097,152 - word by 16 - bit) cmos mobil... |
| Description |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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| File Size |
117.84K /
3 Page |
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Renesas
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| Part No. |
M6MGD13VW34DWG
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| OCR Text |
...nts 128m - bit flash memory and 32m - bit mobile ram in a 72 - pin stacked csp for lead free use. 128m - bit flash memory is a 8,388,608 w...word by 16 - bit) cmos flash memory & 33,554,432 - bit (2,097,152 - word by 16 - bit) cmos mobile ... |
| Description |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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| File Size |
46.11K /
3 Page |
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it Online |
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Amphenol, Corp.
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| Part No. |
UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4632312F9-B85X-BT3
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| OCR Text |
...egrated circuit pd4632312-x 32m-bit cmos mobile specified ram 2m-word by 16-bit extended temperature operation data sheet the mark shows major revised points. description the pd4632312-x is a high speed, low power, 33,554,4... |
| Description |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
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| File Size |
334.70K /
48 Page |
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it Online |
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Renesas
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| Part No. |
M6MGE13VW34DWG
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| OCR Text |
...nts 128m - bit flash memory and 32m - bit mobile ram in a 72 - pin stacked csp for lead free use. 128m - bit flash memory is a 8,388,608 w...word by 16 - bit) cmos flash memory & 33,554,432 - bit (2,097,152 - word by 16 - bit) cmos mobile ... |
| Description |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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| File Size |
46.37K /
3 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX29LV320ABXEI-90G MX29LV320ATXEI-90G MX29LV320ABTI-70G MX29LV320ABXBC-70G MX29LV320ABTC-90G MX29LV320ATTI-90G
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| OCR Text |
32m-bit [4m x 8 / 2m x 16] single voltage 3v only flash memory features general features ? 4,194,304 x 8 / 2,097,152 x 16 switchable secto...word typical utilizing acceler- ate function - fast erase time: 0.9s/sector, 35s/chip (typical) lo... |
| Description |
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
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| File Size |
626.14K /
60 Page |
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Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
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| Part No. |
MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE11PBT MBM29PDS322TE10 MBM29PDS322TE10PBT
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| OCR Text |
32m (2m 16) bit page dual operation mbm29pds322te/be 10/11 n n n n description the mbm29pds322te/be is 32m-bit, 1.8 v-only flash memory...word at a time using the eprom programming mechanism of hot electron injection.
mbm29pds322te/be ... |
| Description |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
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| File Size |
238.87K /
66 Page |
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Sharp, Corp.
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| Part No. |
LH28F320BJHE-PTTL90
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| OCR Text |
32m (x8/x16) flash memor y date oct. 2. 2000
lhf32j04 rev. 1.27 handle this document carefully for it contains material protected by in...word/byte write command....................................... 14 4.8 block erase suspend command ..... |
| Description |
Flash ROM 闪存ROM
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| File Size |
683.17K /
47 Page |
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it Online |
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