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  2.0-ghz Datasheet PDF File

For 2.0-ghz Found Datasheets File :: 30497    Search Time::6.64ms    
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    ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text ...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and Reel Packaging Option Available [1...
Description ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET

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    ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text ...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-And-Reel Packaging Option Available [1]...
Description ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ...ical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available [1] ...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text 2-18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features * Low Noise Figure: 1.1 dB Typical at 12 GHz * High Associate...0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization s...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text 2 - 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features * Low Noise Figure: 1.4 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Eff...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 41.75K  /  3 Page

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text 2-16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features * Low Noise Figure: 1.8 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Cer...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 44.11K  /  4 Page

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ...ivers operating in the 900 MHz, 2.4 GHz, and 5.7 GHz ISM bands. 85 mil Plastic Surface Mount Package Pin Configuration 4 SOURCE 20...0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum...
Description Surface Mount Gallium Arsenide FET for Oscillators

File Size 43.73K  /  3 Page

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text ...ure: VDS = 3 V, IDS = 20 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 80 -3.0 Min. Typ. Max. 0.6 0.9 1.2 16.0 13.0 10.0 23.0 13.0 120 120 -1.5...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

File Size 41.90K  /  3 Page

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text 2 GHz * High Output Power: 19 dBm Typ. P1dB @ 2 GHz * High MSG: 13.5 dB Typ. @ 2 GHz * Low Cost Surface Mount Plastic Package * Tape-and-Ree...0 0.1 1 FREQUENCY (GHz) 10 This GaAs FET device has a nominal 0.3 micron gate length using airbri...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text ...0 -3.0 Min. Typ. Max. 0.8 1.0 1.2 14.0 11.5 9.0 21.0 15.0 80 100 -2.0 150 -0.8 1.0 GA Gain @ NFO: VDS =3 V, IDS = 20 mA 13.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS =50 mA 1 dB Compressed Ga...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

File Size 40.04K  /  3 Page

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