... 5
DC Cur rent Gain h F E
12
5C
Transient Thermal Resistance
1
10
25
C
0C
Switching T im e
-3
1 0.5
tf
0.5
5
2 0.02
0.05
0.1
0.5
1
5
7
0.1 0.2
0.5
1
5
7
0.1
...
Description
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
...VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 60 100 125 -55 to +125 V V V mA mW C C
Document No. P10383EJ2V0DS00 (2nd edition) (Previous No. TD-2428) Date Published July 1995 P Printed in Japan
0 to 0.1
(c)
1995 1992
2SC5004
ELECTRI...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
...VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 30 100 125 -55 to +125 V V V mA mW C C
Document No. P10384EJ2V0DS00 (2nd edition) (Previous No. TD-2429) Date Published July 1995 Printed in Japan
0 to 0.1
(c)
1995 1992
2SC5005
ELECTRICA...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
...VCBO VCEO VEBO IC PT Tj Tstg 20 12 3.0 100 125 150 -60 to +150 V V V mA mW C C
Document No. P10385EJ2V0DS00 (2nd edition) (Previous No. TD-2399) Date Published July 1995 P Printed in Japan
0 to 0.1
(c)
0.15
+0.1 -0.05
0.3 ...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
...OWER GAIN vs. COLLECTOR CURRENT 12 |S21e|2 - Insertion Power Gain - dB VCE = 3 V f = 2 GHZ
12 fT - Gain Bandwidth Product - GHz VCE = 3 V f = 2 GHZ 10 8 6 4 2 0 0.5
10 8
6 4 2 0
1
2
5
10
20
50
0.5
1
2
...
... * High fT * Low Cre * Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
2
1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15
+0.1 -0.0...
Description
NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
...VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 100 150 150 -65 to +150 V V V mA mW C C
Caution; Electrostatic Sensitive Device.
Document No. P10399EJ2V0DS00 (2nd edition) (Previous No. TD-2411) Date Published July 1995 P Printed in Japan
(c)...
Description
NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD