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  0.25a Datasheet PDF File

For 0.25a Found Datasheets File :: 14772    Search Time::2.203ms    
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    13003CDHG-T60-K 13003CDHG-T92-B 13003CDHG-T92-K 13003CDHG-T92-R 13003CDHG-TM3-T 13003CDHL-T60-K 13003CDHL-T92-B 13003CDH

Unisonic Technologies
Part No. 13003CDHG-T60-K 13003CDHG-T92-B 13003CDHG-T92-K 13003CDHG-T92-R 13003CDHG-TM3-T 13003CDHL-T60-K 13003CDHL-T92-B 13003CDHL-T92-K 13003CDHL-T92-R 13003CDHL-TM3-T
OCR Text ... * inductive switching matrix 0.5 ~ 1.5 amp, 25 and 100c typical t c = 290ns @ 1a, 100c. * 900v blocking capability ? applications ...25a 1 i c =1.5a, i b =0.5a 3 i c =1a, i b =0.25a, t c =100c 1 base-emitter satura tion volt...
Description NPN SILICON POWER TRANSISTOR
   NPN SILICON POWER TRANSISTOR

File Size 125.23K  /  4 Page

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    IRF6795MPBF IRF6795MTRPBF

International Rectifier
Part No. IRF6795MPBF IRF6795MTRPBF
OCR Text ...m@ 10V 2.4m@ 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 35nC 10...25A A Single Pulse Avalanche Energy Avalanche CurrentAg ID = 32A 5 4 3 T J = 125C 2 T J = 25C...
Description HEXFET Power MOSFET plus Schottky Diode

File Size 217.06K  /  9 Page

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Part No. 241-8-20A54
OCR Text ... lbs. 3 2.4 2.06 1.06 1.19 1.62 0.56 1.75 0.25 4 6 2.38 1.25 1.38 1.69 0.69 2.0 0.44 5 12 2.81 1.38 1.63 1.94 0.81 2.38 0.7 6 30 3.25 1.69 1...25a 10v c.t. @ 0.6a 10v c.t. @ 1.2a 10v c.t. @ 3.0a 10v c.t. @ 5.0a 10v c.t. @ 10a 241-3-12a2 241-4-...
Description SPLIT BOBBIN POWER TRANSFORMER, 100 VA

File Size 87.62K  /  1 Page

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    IRFR3806PBF IRFU3806PBF

International Rectifier
Part No. IRFR3806PBF IRFU3806PBF
OCR Text ...rom case) Max. 43 31 170 71 0.47 20 24 -55 to + 175 300 Units A W W/C V V/ns C Avalanche Characteristics EAS (Thermally limited...25A f V VDS = VGS, ID = 50A A VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = ...
Description HEXFET Power MOSFET

File Size 504.79K  /  10 Page

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    VP0650

Supertex, Inc
Part No. VP0650
OCR Text ...N) (max) 30 30 ID(ON) (min) -0.2A -0.2A Order Number / Package TO-39 VP0645N2 -- TO-92 -- VP0650N3 TO-220 -- VP0650N5 Die VP0645ND VP0...25A -0.25a ID (pulsed) -0.3A -0.5A -0.5A Power Dissipation @ TC = 25C 1W 6W 45W jc ja IDR* ...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 58.23K  /  4 Page

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    TLP55707 TLP557

Toshiba Semiconductor
Part No. TLP55707 TLP557
OCR Text ...tage: 16V(max.) Output current: 0.3A(max.) Switching time (tpLH / tpHL): 5s(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, f...25A) 70 Unit mA V V A A V C Note: Recommended operating conditions are given as a design guid...
Description Inverter For Air Conditioner

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    ANV
Part No. SSR-05DD-H SSR-05DA SSR-10AA SSR-10AA-H SSR-05LA SSR-05VA SSR-10DD SSR-10DA SSR-10DA-H
OCR Text ...andard type d = dc4~32v ( range=0~90% ) a = ac80~250v v = adjusted output voltage l = 4~20ma 25 =40 = 50 = 05 = 10 = 15 = 5a 10a15a 25a 40a 50a 80 = 80a 100 = 100a 120 = 120a output current free datasheet http:// 2 input data operating v...
Description SSR Series SOLID STATE RELAY

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    SamHop Microelectronics...
Part No. SP8006
OCR Text ...ed. 10 1.07 5.5 @ vgs=3.1v 6.0 @ vgs=2.5v 4.9 @ vgs=3.7v n-channel enhancement mode field effect transistor tson 3.3 x 3.3 pin 1 4 ...25a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1.0...
Description Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor

File Size 111.81K  /  8 Page

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    SC1116 SC1116ISKTR SC1116ISKTRT

Semtech Corporation
Part No. SC1116 SC1116ISKTR SC1116ISKTRT
OCR Text ...ce. Wide range of VDDQ, down to 0.5V SC1116 Features User can select FETs to optimize system current rating/dropout/cost Low VDDQ, 0....25A to -1.25A Slew Rate: 2.5 A/uS I STEP : - 0.75A to + 0.75A Slew Rate: 2.5 A/uS Time (50us/d...
Description Linear FET Controller For DDR Supplies

File Size 235.14K  /  11 Page

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    SamHop
Part No. SP2013
OCR Text ...-20 v -1 i gss 100 na v gs(th) -0.5 v m ohm v gs =-4.5v , i d =-4.25a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =-1.0ma v ds =-16v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain c...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 111.64K  /  8 Page

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