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  0.063 Datasheet PDF File

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...akdown Voltage (VGE = 0V, I C = 0.50mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.50 mA nA ...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold V...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A IN IM L E R P 600 600 20 55 50 @ TC = 25C Volts 110 100 75 Amps mJ Watts C 180 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(T...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text 0.038W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avala...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text 0.038 W S G D S POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Bo...063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avala...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text 0.050W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avala...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text 0.050 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOS...063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avala...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text 0.050 S G D S POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs....063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text 0.050 S G D S POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tec...063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text 0.050W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po...063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avala...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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