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Diodes, Inc.
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| Part No. |
SD101AWS
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| OCR Text |
...ility rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a polarity: cathode band leads: solderable per mil-std-20...05 typical e 0.25 0.35 g 0.20 0.40 h 0.10 0.15 j 0.05 typical 0 8 all dimensions in mm note: 1... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 60 V, SILICON, SIGNAL DIODE
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| File Size |
57.86K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR183T
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| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...05 0.02 0.01 0.005 0
10 1 -7 10
-6 -5 -4 -3 -2 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
... |
| Description |
NPN Silicon RF Transistor
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| File Size |
79.60K /
7 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR183W
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| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10... |
| Description |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
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| File Size |
78.50K /
7 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFR183W Q62702-F1493
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| OCR Text |
...0 A 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff curr...05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0
10 -1 -6 10
10
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| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
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| File Size |
56.46K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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