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Advanced Power Electron...
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| Part No. |
AP15P10GJ-HF
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| OCR Text |
...atic drain-source on-resistance 2 v gs =-10v, i d =-6a - - 230 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-9a - 8 - s i dss drain-source leakage current v ds =-100v,... |
| Description |
Fast Switching Characteristic
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| File Size |
101.27K /
5 Page |
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ELM Technology Corporat...
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| Part No. |
ELM3F401JA-S
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| OCR Text |
... avalanche energy l=0.1mh eas 4 2 mj power dissipation t c = 25 c pd 2. 0 w t c = 7 0 c 1. 2 j unction and storage temperature range tj , ...9a , vgs = 0v -1 v 1 max. body - d iode continuous c urrent is -25 a 4 dynamic parameters input ca... |
| Description |
Single P-channel MOSFET
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| File Size |
669.85K /
4 Page |
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Advanced Power Electron...
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| Part No. |
AP9561GM-HF-14
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| OCR Text |
...rameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 storage temperature range continuous drain cu...9a - - 18 m ? v gs =-4.5v, i d =-6a - - 30 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-25... |
| Description |
Simple Drive Requirement
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| File Size |
90.79K /
4 Page |
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it Online |
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Diodes
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| Part No. |
DMP3065LVT DMP3065LVT-13
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| OCR Text |
2 - 2 1 of 6 www.diodes.com february 2014 ? diodes incorporated dmp3065lvt advance information p-channel enhancem ent mode mos...9a 65m ? @ v gs = -4.5v -3.7a description and applications this mosfet has been designed to... |
| Description |
P-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
230.75K /
6 Page |
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it Online |
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Price and Availability
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