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For unilateral Found Datasheets File :: 420 Search Time::2.016ms
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				NXP Semiconductors Philips Semiconductors
Part No.	BFT93
OCR Text	...A mW GHz pF dB dB mV maximum unilateral power gain IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C noise figure output voltage IC = -10 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C dim = -60 dB; IC = -30 mA; VCE = -5 V; RL = 75 ; f(p+q-r) ...
Description	PNP 5 GHZ WIDEBAND TRANSISTOR
File Size	47.97K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BFT93 BFT93_CNV_2
OCR Text	...A mW GHz pF dB dB mV maximum unilateral power gain IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C noise figure output voltage IC = -10 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C dim = -60 dB; IC = -30 mA; VCE = -5 V; RL = 75 ; f(p+q-r) ...
Description	PNP 5 GHz wideband transistor From old datasheet system
File Size	37.81K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFG591
OCR Text	...ce transition frequency maximum unilateral power gain insertion power gain open base CONDITIONS open emitter - - - up to Ts = 80 C; note 1 IC = 70 mA; VCE = 8 V IC = Ic = 0; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70...
Description	NPN 7 GHz wideband transistor
File Size	106.26K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BFR92
OCR Text	...f = 1 mhz 0.4 - pf g um maximum unilateral power gain i c = 14 ma; v ce = 10 v; f = 500 mhz; t amb =25 c 18 - db f noise ?gure i c = 2 ma; v ce = 10 v; f = 500 mhz; t amb =25 c; z s = opt. 2.4 - db v o output voltage d im = - 60 db; i c =...
Description	NPN 5 GHz wideband transistor
File Size	77.77K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF959T1
OCR Text	... IC = 15 mA, f = 1 GHz) Maximum unilateral Gain (4) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Maximum Stable Gain and/or Maximum Available Gain (5) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 G...
Description	LOW NOISE TRANSISTORS
File Size	169.36K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFQ135
OCR Text	...T V mA W GHz dB dB V maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f = 500 MHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 C VO output voltage dim = -60 dB; IC = 120 mA; VCE = 18 V; RL = 75 ; fp + fq -...
Description	NPN 6.5 GHZ WIDEBAND TRANSISTOR
File Size	78.54K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFG541
OCR Text	...ce transition frequency maximum unilateral power gain up to Ts = 140 C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 C IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = ...
Description	NPN 9 GHz wideband transistor NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	141.05K / 12 Page	View it Online	Download Datasheet

				NXP Philips Semiconductors
Part No.	BFG198
OCR Text	...in transition frequency maximum unilateral power gain up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MH...
Description	NPN 8GHz wideband transistor(NPN 8G赫兹宽带晶体 NPN 8 GHz wideband transistor
File Size	95.75K / 12 Page	View it Online	Download Datasheet

For unilateral Found Datasheets File :: 420 Search Time::2.016ms
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