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				Vishay Semiconductors
Part No.	VS-10BQ040TRPBF
OCR Text	....0 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 430 a 10 ms sine or 6 ms rect. pulse 45 non-repetitive avalanche energy e as t j ...
Description	DIODE 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN, Signal Diode
File Size	112.24K / 7 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd Taiwan Semiconductor Compan...
Part No.	TSM20N50CIC0 TSM20N50CZC0 TSM20N5013
OCR Text	...s 640 mj avalanche current (repetitive) (note 1) i ar 18 a repetitive avalanche energy (note 1) e ar 29 mj operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximu...
Description	500V N-Channel Power MOSFET
File Size	442.60K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB10S60C
OCR Text	...t i f,rms f =50 hz 15 surge non-repetitive forward current, sine halfwave i f,sm t c =25 c, t p =10 ms 76 repetitive peak forward current i f,rm t j =150 c, t c =100 c, d =0.1 32 non-repetitive peak forward current i f,max t c =25 c, t...
Description	2nd Generation thinQ SiC Schottky Diode
File Size	298.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	repetitive A ALANCHE AND dv/dt RATED V HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20 ID 25A IRF360 400V, N-CHANNEL The HEXFETtechnology is the key to International Recti...
Description	repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB09E12007
OCR Text	...ied parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continous forward current t c =25c t c =90c i f 23 14.4 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 50 maximum repetitive forw...
Description	Fast Switching EmCon Diode
File Size	204.94K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB04E12007
OCR Text	...ied parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continous forward current t c =25c t c =90c i f 11.2 7.1 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 28 maximum repetitive...
Description	Fast Switching EmCon Diode
File Size	200.54K / 8 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	B370-13 B370-15
OCR Text	...b370 b380 b390 b3100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage (note 4) v rrm v rwm v r 70 80 90 100 v rms reverse voltage v r ( rms ) 49 56 63 70 v average rectified output current @ t ...
Description	3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
File Size	105.62K / 4 Page	View it Online	Download Datasheet

				VISHAY INTERTECHNOLOGY INC
Part No.	VSKJL240-20S30 VSKEL240-14S20
OCR Text	... code t rr code v rrm, maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at 150 c ma vsk.l240 06 s10 600 700 50 10 s10 1000 1100 12 s20 1200 1300 14 s20 1400 1500 20 s30 2000...
Description	240 A, 2000 V, SILICON, RECTIFIER DIODE 250 A, 1400 V, SILICON, RECTIFIER DIODE
File Size	266.20K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...ting Temperature Fast Switching repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 3.3m Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing technique...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...ting Temperature Fast Switching repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Advanced Planar Strip...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

For repetitive Found Datasheets File :: 70374 Search Time::3.125ms
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