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TOSHIBA
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Part No. |
TPH11003NL
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OCR Text |
... nc (typ.) (3) low drain-source on-resistance: r ds(on) = 12.6 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (...board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = ... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
231.75K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
TPCP8007-H
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OCR Text |
...nc (typ.) ? low drain-source on-resistance: r ds (on) = 40 m (typ.) ? high forward transfer admittance: |y fs | = 16 s (typ.) ? ...board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, ... |
Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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File Size |
177.46K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
TPCC8002-H
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OCR Text |
...nc (typ.) ? low drain-source on-resistance: r ds (on) = 7.6 m (typ.) ( v gs = 4.5 v) ? high forward transfer admittance: |y fs ...board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd ... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
231.57K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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