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5932B BUT11 ATV1005 CS3302 32300 M994AP MC1594L 13002
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  id-3.0a Datasheet PDF File

For id-3.0a Found Datasheets File :: 5465    Search Time::3.015ms    
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    New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. IRF9640 IRF9241 IRF9240 IRF9242 IRF924S IRFP9242 IRFP924S IRFP9241 IRF964S IRF9641 IRF9642
OCR Text ... 5 seconds symbol vdss vdgr vgs id id idm igm po tj. tstg tl 9240 9640 -200 -200 irf/i 9241 9641 -150 -150 rfp 9242 9642 -200 -200 9243 9643...3) repetitive rating: pulse width limited by max. junction temperature nj semi-conductors reserves t...
Description P-CHANNEL POWER MOSFETS
200V, P-CHANNEL
   P-CHANNEL POWER MOSFETS

File Size 155.28K  /  4 Page

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    Mitsubishi Electric
Part No. MGFK44A4045
OCR Text ...ons vds = 10 (v) id(rfoff) =6.0 (a) rg=25 (ohm) absolute maximum ratings (ta=25deg.c) symbol parameter ratings unit ...3)prevention against any malfunction or mishap. electrical characteristics (ta=25deg.c) symbol param...
Description BAND 25W INTERNALLY MATCHED GaAs FET

File Size 379.83K  /  4 Page

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    WTC2305A

Weitron Technology
Part No. WTC2305A
OCR Text ...wise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -30 12 -3.2 -2.6 -10 1.38 90 -55~+150 Unit V A Total Power Dissipation(T A =25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temp...
Description P-Channel Enhancement Mode Power MOSFET

File Size 392.76K  /  6 Page

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    MGFK41A4045

Mitsubishi Electric Semiconductor
Part No. MGFK41A4045
OCR Text ...s conditions ? vds=10v ? id=3.0a ? rg=50ohm absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit vgdo gate to drain breakdown voltage -15 v vgso gate to source breakdown voltage -10 v id ...
Description 14.0-14.5 GHz BAND / 12W

File Size 103.67K  /  4 Page

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    FMH06N90E

FUJI ELECTRIC CO LTD
Part No. FMH06N90E
OCR Text ...m : s q u a r e w a v e f o r m id [a] vd s [ v ] safe operating area i d =f(v ds ):duty=0(single pulse), tc=25 c t = 1 s 1 0 s 1 m s 1 0 0 s 0 4 8 1 2 1 6 2 0 2 4 0 1 2 3 4 5 6 7 8 2 0 v 1 0 v 6 . 0 v 7 . 0 v id [a] v d s [ v ] typical ...
Description N-CHANNEL SILICON POWER MOSFET
6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 464.14K  /  5 Page

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    WT2301 WT-2301

http://
Weitron Technology
Part No. WT2301 WT-2301
OCR Text ...emperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value -20 Unite V V A A A W C/W C + -12 -3.4 -12 -1.25 1.25 100 -55 to 150 Device Marking WT2301=S01 WEITRON http://www.weitron.com.tw WT-2301 Electrical Characteri...
Description Surface Mount P-Channel Enhancement Mode MOSFET

File Size 141.84K  /  6 Page

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    WT2300 WT-2300

http://
Weitron Technology
Part No. WT2300 WT-2300
OCR Text ...emperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value 20 Unite V V A A A W C/W C + -10 3.8 15 1.25 1.25 100 -55 to 150 Device Marking WT2300=S00 WEITRON http://www.weitron.com.tw WT-2300 Electrical Characteristic...
Description Surface Mount N-Channel Enhancement Mode MOSFET

File Size 142.94K  /  6 Page

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    Electronic Theatre Controls, Inc.
Part No. UC2861-2868 UC3861-3868 UC1861-1868
OCR Text ... v o = 2v 65 100 db v out low v id = C100mv, i o = 200 m a 0.17 0.25 v v out high v id = 100mv, i o = C200 m a 3.9 4.2 v unity gain bandwidth (note 4) 0.5 0.8 mhz voltage controlled oscillator maximum frequency v id (error amp) = 100mv, t j...
Description Resonant-Mode Power Supply Controllers

File Size 415.81K  /  9 Page

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    STS2300

SamHop Microelectronics Cor...
SamHop Microelectronics Corp.
Part No. STS2300
OCR Text ... F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON). 40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S A...
Description N-Channel E nhancement Mode Field EffectTransistor

File Size 580.80K  /  7 Page

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    STS2301

SamHop Microelectronics Corp.
Part No. STS2301
OCR Text ... F E AT UR E S ( m W ) Max ID -3.4A R DS (ON) S uper high dense cell design for low R DS (ON). 60 @ V G S = -4.5V 80 @ V G S = -2.5V 105 @ V G S = -1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S...
Description P-Channel E nhancement Mode Field Effect Transistor

File Size 582.96K  /  7 Page

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For id-3.0a Found Datasheets File :: 5465    Search Time::3.015ms    
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