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alumina Datasheet PDF File

For alumina Found Datasheets File :: 4557 Search Time::1.735ms
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				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	MMBD7000LT1 ON2085
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C...
Description	Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
File Size	75.82K / 4 Page	View it Online	Download Datasheet

				Zowie Technology, Corp. ZOWIE[Zowie Technology Corporation]
Part No.	MMBD7000
OCR Text	...mbient Total Device Dissipation alumina Substrate, o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMB...
Description	DUAL SWITCHING DIODE 双开关二极管
File Size	47.35K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBT3904LT1
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/...
Description	General Purpose Transistor
File Size	230.43K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MMBT3904L MMBT3904LT1G MMBT3904LT3 MMBT3904LT3G MMBT3906L MMBT3904L1 MMBT3904LT1
OCR Text	...mbient Total Device Dissipation alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW...
Description	General Purpose Transistor(NPN Silicon) General Purpose Transistor (NPN Silicon)
File Size	101.33K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMBT3906LT1 MMBT3906LT1_D ON2120
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/...
Description	From old datasheet system Motorola Preferred Device General Purpose Transistor
File Size	221.55K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] Diodes Incorporated
Part No.	MMBZ5V6ALT1G MMBZ5V6ALT3 MMBZ5V6ALT3G MMBZ9V1ALT MMBZ33VALT MMBZXXVALT3G MMBZXXVALT3 MMBZXXVALT1G MMBZXXVALT1 MMBZ33VALT1 MMBZ33VAL MMBZ6V2AL MMBZ6V8ALT1 MMBZ6V8ALT1G MMBZ5V6ALT1 MMBZ9V1ALT1 MMBZ9V1ALT13G MMBZ9V1ALT1G MMBZ9V1ALT3 MMBZ20VALT1 MMBZ20VALT1G MMBZ20VALT3 MMBZ20VALT3G MMBZ18VAL MMBZ18VALT1 MMBZ18VALT1G MMBZ18VALT3 MMBZ18VALT3G MMBZ12VAL MMBZ12VALT1 MMBZ12VALT1G MMBZ12VALT3 MMBZ12VALT3G MMBZ10VAL MMBZ10VALT1 MMBZ5V6AL MMBZ9V1AL MMBZ15VALT1 MMBZ15VALT1G MMBZ15VALT3G MMBZ20VAL MMBZ27VAL MMBZ27VALT1 MMBZ27VALT1G MMBZ27VALT3 MMBZ27VALT3G MMBZ33VALT1G MMBZ33VALT3 MMBZ33VALT3G MMBZ6V2ALT1 MMBZ6V2ALT1G MMBZ6V2ALT3 MMBZ6V2ALT3G MMBZ6V8AL MMBZ6V8ALT3 MMBZ6V8ALT3G MMBZ15VAL MMBZ15VALT3 MMBZ6VXALT1 ONSEMICONDUCTOR-MMBZ18VALT3G MMBZ9V1 MMBZ6VXALT1G MMBZ6VXALT3 MMBZ6VXALT3G
OCR Text	...ient Total Power Dissipation on alumina Substrate (Note 3) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) Maximum ratings a...
Description	ZEN SOT23 REG .225W 12V 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
File Size	70.29K / 8 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	MMBTA92
OCR Text	...mbient Total device dissipation alumina substrate 2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Re...
Description	High Voltage Transistors
File Size	39.19K / 2 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd TY Semiconductor Co., L...
Part No.	LMBTA55LT1G LMBTA55LT3G LMBTA56LT1G
OCR Text	... device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmb t a55 l t1g ...
Description	MAXIMUM RATINGS
File Size	126.06K / 3 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	BAV99WT1G BAV99RWT1 BAV99RWT1G BAV99WT1 BAV99RW
OCR Text	...mbient Total Device Dissipation alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Symbol PD RqJA PD RqJA TJ, Tstg Max 200 1.6 625 300 2.4 417 -65 to +150 Unit mW mW...
Description	Reverse Dual Diode Dual Series Switching Diodes
File Size	49.58K / 4 Page	View it Online	Download Datasheet

				ROHM ON Semi MOTOROLA[Motorola, Inc]
Part No.	BAV99WT1 BAV99RWT1 ON0136 BAV99
OCR Text	...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR-5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. Symbol PD Max...
Description	Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type SC-70/SOT-323 Dual Series Switching Diode BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23 From old datasheet system
File Size	128.48K / 6 Page	View it Online	Download Datasheet

For alumina Found Datasheets File :: 4557 Search Time::1.735ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |