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  900v Datasheet PDF File

For 900v Found Datasheets File :: 1971    Search Time::2.766ms    
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    APTGT30A170T1G

Microsemi Corporation
Part No. APTGT30A170T1G
OCR Text ...g (25c) v ge = 15v v bus = 900v i c = 30a r g = 18 ? 80 ns t d(on) turn-on delay time 100 t r rise time 70 t d(off) turn-off delay time 750 t f fall time inductive switching (125c) v ge = 15v v...
Description Phase leg Trench Field Stop IGBT? Power Module

File Size 275.70K  /  5 Page

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    2MBI300VN-170-50

Fuji Electric
Part No. 2MBI300VN-170-50
OCR Text ... - nf turn-on time t on v cc = 900v i c = 300a v ge = 15v r g = 4.7? l s = 80nh - 900 - nsec t r - 400 - t r (i) - 100 - turn-off time t off - 1300 - t f - 100 - forward on voltage v f (terminal) v ge = 0v i f = 300a t j =25c - 2.25...
Description IGBT MODULE (V series) 1700V / 300A / 2 in one package

File Size 384.59K  /  6 Page

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    DIM800DCM17-A00011 DIM800DCM17-A000-15

Dynex Semiconductor
Part No. DIM800DCM17-A00011 DIM800DCM17-A000-15
OCR Text ... arm i f = 800a v ce = 900v di f /dt = 4000a/s 250 c i rr diode reverse recovery current 530 a e rec diode reverse recovery energy 160 mj t case = 125c unless stated otherwise symbol ...
Description IGBT Chopper Module

File Size 315.74K  /  8 Page

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    DIM400DCM17-A00011 DIM400DCM17-A000-15

Dynex Semiconductor
Part No. DIM400DCM17-A00011 DIM400DCM17-A000-15
OCR Text ... arm i f = 400a v ce = 900v di f /dt = 2000a/s 100 c i rr diode reverse recovery current 230 a e rec diode reverse recovery energy 70 mj q rr diode reverse recovery charge dio de arm i f ...
Description IGBT Chopper Module

File Size 277.58K  /  8 Page

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    TOSHIBA
Part No. MG400V2YS60A
OCR Text ...t off inductive load v cc = 900v i c = 400a v ge = 15v r g = 8.2 ? (note) D 1.3 D s t j = 25c D 3.2 4.2 forward voltage v f i f = 400a, v ge = 0v t j = 125c D 2.4 D v reverse recovery time t rr i f = 40...
Description IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

File Size 208.82K  /  9 Page

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    2SK3982-01MR

Fuji Electric
Part No. 2SK3982-01MR
OCR Text ...rent i dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.3a v gs =10v i d =1.3a v ds =25v v cc =600v i d =1.3a v gs =10v r gs =10 ? v v a na ? s pf nc v s c ns min. typ. max. units ther...
Description N-CHANNEL SILICON POWER MOSFET

File Size 219.92K  /  4 Page

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    DIM400PHM17-A000

Dynex Semiconductor
Part No. DIM400PHM17-A000
OCR Text ...ff turn-off energy loss v ce = 900v - 120 - mj t d(on) turn-on delay time r g(on) = r g(off) = 4.7 - 250 - ns t r rise time l 100nh - 250 - ns e o turn-on energy loss - 150 - mj q g gate charge - 4.5 - c q rr diode reverse recovery...
Description Half Bridge IGBT Module

File Size 415.28K  /  9 Page

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    2MBI650VXA-170E-50

Fuji Electric
Part No. 2MBI650VXA-170E-50
OCR Text ...3 - nf turn-on time ton v cc = 900v i c = 650a v ge = 15v r g = +1.8/-2.7? - 1.25 - s tr - 0.50 - tr (i) - 0.15 - turn-off time toff - 1.55 - tf - 0.15 - forward on voltage v f (terminal) (*4) v ge = 0v i f = 650a tj=25c - 1.95 2.40 ...
Description IGBT MODULE (V series) 1700V / 650A / 2 in one package

File Size 350.90K  /  7 Page

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    Cornell Dubilier Electronics, Inc.
Part No. DIM100CHS17-E
OCR Text ... 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward cur...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 164.31K  /  8 Page

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    TSM3N90 TSM3N90CI TSM3N90CZ TSM3N90CH TSM3N90CP

Taiwan Semiconductor Company, Ltd
Part No. TSM3N90 TSM3N90CI TSM3N90CZ TSM3N90CH TSM3N90CP
OCR Text 900v n-channel power mosfet 1/12 version: a12 to - 220 ito - 220 produ...
Description 900v N-Channel Power MOSFET

File Size 511.06K  /  12 Page

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For 900v Found Datasheets File :: 1971    Search Time::2.766ms    
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