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Hitachi,Ltd.
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| Part No. |
HM5112805FLTD-6 HM5112805F-6
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| OCR Text |
6, hm5113805f-6 128m edo dram (16-mword 8-bit) 8k refresh/4k refresh ade-203-1050c (z) rev. 3.0 feb. 2, 2000 description the hitachi hm5112805f, hm5113805f are 128m-bit dynamic rams organized as 16,777,216-word 8-bit. they have realize... |
| Description |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
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| File Size |
477.94K /
34 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLC257MH-6
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| OCR Text |
6
C-Band Power GaAs FET FEATURES
* * * * * High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 9.0dB(Typ.) High PAE: add = 36%(Typ.)...3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Am... |
| Description |
C-Band Power GaAs FET
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| File Size |
87.76K /
4 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
MCK100-6
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| OCR Text |
... v . a j u n .20 11 mc k 10 0 - 6 s s s s e e e e n n n n si si si si t t t t ive ive ive ive g g g g a a a a t t t t e e e e s s s s ilic i...3 ms 9 a t p = 1 0 ms 8 i 2 t i 2 t v a l u e f o r f u s i n g t p = 8 . 3 ms 0 . 4 1 a 2 s p g m p... |
| Description |
Silicon Controlled Rectifiers
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| File Size |
271.54K /
5 Page |
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http://
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
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| Part No. |
MCR22-6 MCR22-8 MCR22-2 MCR22-3 MCR22-4 MCR22-5 MCR22-7 MCR22
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| OCR Text |
...) MCR22-2 MCR22-3 MCR22-4 MCR22-6 MCR22-8 On-State Current RMS (All Conduction Angles) Peak Non-repetitive Surge Current, TA = 25C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, TA = 25C Average Ga... |
| Description |
Silicon Controlled Rectifiers 1.5 A, 200 V, SCR, TO-226AA
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| File Size |
101.45K /
6 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16V644AWJ-6 MH16V644AWJ-5 MH16V644AWJ
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| OCR Text |
6
FAST PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM PIN CONFIGURATION
DESCRIPTION
The MH16V644AWJ is 16777216...3.3V(0.3V) supply operation Low stand-by power dissipation 17.28mW(Max) . . . . . . . . . . . . . . ... |
| Description |
From old datasheet system
FAST PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
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| File Size |
185.23K /
20 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16V645BWJ-6 MH16V645BWJ-5 B98076
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| OCR Text |
6
HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM PIN CONFIGURATION
DESCRIPTION
The MH16V645BWJ is 1677721...3.3V(0.3V) supply operation Low stand-by power dissipation 28.8mW(Max) . . . . . . . . . . . . . . .... |
| Description |
From old datasheet system
HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
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| File Size |
125.98K /
22 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S72BCFD-6
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| OCR Text |
6 mitsubishi lsis 9 /may. /1999 mit-ds-0312-0.0 description application main memory or graphic memory in computer systems preliminar...3.3v +/- 0.3v supply max.clock frequency 133mhz fully synchronous operation referenced to clock ris... |
| Description |
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
1,104.80K /
56 Page |
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