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INTERSIL[Intersil Corporation]
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| Part No. |
RHRD4120S RHRD4120 FN3626
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| OCR Text |
...0.1
25oC 1
0.01 25oC
0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VF, FORWARD VOLTAGE (V)
0.001 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VO... |
| Description |
4A/ 1200v Hyperfast Diodes
4A, 1200v Hyperfast Diodes
From old datasheet system
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| File Size |
44.69K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100R
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| OCR Text |
...ient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, ...0A 100Hz
IC, COLLECTOR CURRENT
TC=80C TC=110C
10A
50s 100s 500s
Ic
1A DC 10ms
1... |
| Description |
Reverse Conducting IGBT with monolithic body diode
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| File Size |
367.51K /
12 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100T
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| OCR Text |
...ient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, ...0A 100Hz 1kHz 10kHz 100kHz TC=80C TC=110C
IC, COLLECTOR CURRENT
10A
50s 100s 500s
Ic
... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
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| File Size |
356.94K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4PH40UD2-E IRG4PH40UD2-EPBF
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| OCR Text |
...24 --- 6 (0.21)
Max.
0.77 2.5 --- 40 ---
Units
C/W
g (oz.)
www.irf.com
1
9/17/03
IRG4PH40UD2-E
Electrical Characterist...0A -- V/C VGE = 0V, IC = 1mA IC = 21A VGE = 15V 3.1 V IC = 41A -- See Fig.2, 5 IC = 21A, TJ = 150C -... |
| Description |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AD package
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| File Size |
247.90K /
10 Page |
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it Online |
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SANYO
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| Part No. |
2SC5305LS 2SC5305
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| OCR Text |
...m 2079D
[2SC5305]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 123
0.7
Specifications
...0A, IB=0.6A VBE(sat) hFE1 hFE2 tstg tf IC=3.0A, IB=0.6A VCE=5V, IC=0.3A VCE=5V, IC=2.5A IC=3.5A, IB1... |
| Description |
NPN Triple Diffused Planar Silicon Transistor Inverter Lighting Applications
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| File Size |
47.09K /
5 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRGPH50M
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| OCR Text |
...- 3.0 -- V IC = 42A See Fig. 2, 5 -- 2.8 -- IC = 23A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 11 15 -- S VCE = 100V, I C = 23A -- -- 250 A VGE = 0V, V CE = 1200v -- -- 2000 VGE = 0V, V CE = 1200v, T J ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v @Vge=15V Ic=23A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v, @Vge=15V, Ic=23A)
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| File Size |
217.93K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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