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				ATMEL Corporation Atmel Corp. Atmel, Corp. http://
Part No.	AT52BR1674T-85CI AT52BR1672-85CI AT52BR1672T-85CI AT52BR1674-85CI AT52BR1672 AT52BR1674T AT52BR1674 AT52BR1672T
OCR Text	... Flash Plane Architecture 12M + 4M 12M + 4M Flash Configuration 16M (1M x 16) 16M (1M x 16) SRAM Configuration 2M (128K x 16) 4M (256K...Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum o...
Description	16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:3; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Female RoHS Compliant: No Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:MS3102R; Number of Contacts:3; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:2; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Male RoHS Compliant: No 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory 16兆的闪存 4兆位的SRAM堆栈内存
File Size	328.13K / 39 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd.
Part No.	27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096PI-10 MX27C4096PI-15 MX27C4100MC-15 MX27C4100MI-15 MX27C4100PI-10
OCR Text	...he mx27c4100/4096 is a 5v only, 4m-bit, one time programmable read only memory. it is organized as 256k words by 16 bits per word(mx27c4096), 512k x 8 or 256k x 16(mx27c4100), operates from a single + 5 volt supply, has a static standby m...
Description	(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
File Size	769.73K / 18 Page	View it Online	Download Datasheet

				AMIC Technology Corporation AMIC Technology, Corp.
Part No.	A42L2604S-45 A42L2604V-50 A42L2604V-50U A42L2604S-50 A42L2604V-45 A42L2604V-45U
OCR Text	4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 0.1 0.2 0.3 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Hist...word by 4-bit configuration. This product can execute Write and Read operation via CAS pin. The A42L...
Description	4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 4米4的CMOS动态RAM与江户页面模
File Size	263.10K / 25 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570KV18-500BZXC CY7C1570KV18-450BZXC
OCR Text	...code 8 22 8 ld control r/w doff 4m x 8 array 4m x 8 array 8 dq [7:0] 8 cq cq qvld write reg write reg clk a (21:0) gen. k k control logic ad...word of data from this address location is driven onto the q [17:0] using k as the output timing r...
Description	72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
File Size	611.30K / 30 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240YT K5A3340YTC-T855 K5A3240YBC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A3340YBC-T855 K5A3340YT K5A3340YTC-T755
OCR Text	...6) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date...Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase opera...
Description	Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
File Size	863.20K / 45 Page	View it Online	Download Datasheet

				MIRA
Part No.	CHD408LVS CHD408LVW
OCR Text	4M -BIT (512K-WORD BY 8-BIT) SuperT-SRAMTM LOW-POWER ASYNCHRONOUS SRAM DESCRIPTION The CHD408L is a family of low voltage, low power 4Mbit static RAMs organized as 512K-words by 8-bit, designed with Cascade's patent pending SuperT-SRAMT...
Description	4M-Bit Low Power Asynchronous SRAM
File Size	134.41K / 11 Page	View it Online	Download Datasheet

				http:// AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
Part No.	A23L26161 A23L2616 A23L2616V-70 A23L2616V-100 A23L2616R-70 A23L2616R-100 A23L2616M-70 A23L2616M-100 A23L26161V-70 A23L26161V-100
OCR Text	4M X 16 / 8M X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 4M X 16 / 8M X 8 BIT CMOS MASK ROM History Initial issue Issue ...WORD mode) /LSB Address (BYTE mode) Chip Enable Input Output Enable Input BYTE or WORD mode Selectio...
Description	Power Resistor; Series:MK; Resistance:20kohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C 4M X 16 / 8M X 8 BIT CMOS MASK ROM 4米16 / 8米8位CMOS掩膜ROM Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle 4米16 / 8米8位CMOS掩膜ROM
File Size	120.61K / 11 Page	View it Online	Download Datasheet

				http:// SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5A3340YTC-T855 K5A3340YTC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A3240YBC-T755 K5A3340YBC-T7550 K5A3340YTC-T7550 K5A3240YBC-T8550
OCR Text	...6) dual bank nor flash memory / 4m(512kx8/256kx16) full cmos sram the attached datasheets are provided by samsung electronics. samsung elec...word) and erases in units of a block. single or multiple blocks can be erased. the block erase opera...
Description	SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
File Size	877.37K / 45 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD
OCR Text	4M word by 36-bit dynamic RAM module and consists of 8 industry standard 4M X 4 dynamic RAMs in TSOP and 4 industry standard 4M X 1 dynamic RAMs in TSOP. The ICs are mounted on both sides of small ceracom PC boards and form a convenient 64-...
Description	FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式（4194304 - Word6位）动态随机存储器 From old datasheet system
File Size	130.45K / 14 Page	View it Online	Download Datasheet

				SHARP
Part No.	LH28F004SU-Z1 LH28F004SUT-Z1
OCR Text	4m (512k 8) flash memory features ? 512k 8 word configuration ? 5 v write/erase operation (5 v v pp ) C no requirement for dc/dc converter to write/erase ? 100 ns maximum access time ? 32 independently lockable blocks (16k) ? 100,000 eras...
Description	4M (512K x 8) Flash Memory
File Size	206.12K / 32 Page	View it Online	Download Datasheet

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