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For 4.6cm Found Datasheets File :: 891 Search Time::2.188ms
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				INTERSIL[Intersil Corporation]
Part No.	HGT1S1N120 FN4651 HGT1S1N120CNDS HGTP1N120CND
OCR Text	...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Packag...
Description	6.2A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 6.2A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	79.21K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPI07N65C3 SPA07N65C3 SPP07N65C3
OCR Text	... TC = 25 C TC = 100 C ID 7.3 4.6 ID puls EAS EAR A 7.31) 4.61) 21.9 230 0.5 2.5 20 30 32 W A V A mJ Pulsed drain current, tp limit...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C ...
Description	Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor Cool MOS?/a> Power Transistor
File Size	295.21K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKP10N60T IKB10N60T
OCR Text	...E = 2 0V V C E = 20V, I C = 10A 4.1 600 Symbol Conditions RthJCD TO-220-3-1 RthJC TO-220-3-1 Symbol Conditions IKP10N60T IKB10N60T Max. Value 1.35 1.9 62 65 40 Unit K/W Value min. typ. 1.5 1.8 1.6 1.6 4.6 max. 2.05 2.0 5.7 Unit ...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	392.39K / 14 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	L9339MD L9339DIE1 L9339 6927 L9339-TR L9339MD-TR
OCR Text	4.5V UP TO 32V FOR TRANSIENT 45V VERY LOW STANDBY QUIESCENT CURRENT < 2A INPUT TO OUTPUT SIGNAL TRANSFER FUNCTION PROGRAMMABLE HIGH SIGNAL R...6cm 2 on board heat sink area. 3. Mounted on SMPCB2 board 3/9 L9339 ELECTRICAL CHARACTERISTCS...
Description	QUAD LOW SIDE DRIVER From old datasheet system QUAD LOW SIDE DRIVER
File Size	111.10K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPN01N60C3
OCR Text	4 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra ...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. ...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor
File Size	224.33K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD
OCR Text	... n.c. C A C Value 6 8.4 21.5 28 60 2.3 600 600 57.6 A Unit A Maximum Ratings, at Tj = 25 C, unless otherwise specified Para...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. ...
Description	Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package 600V Silicon Carbide Ultrafast Schottky Diode Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package Silicon Carbide Schottky Diodes - 6A diode in TO263 package
File Size	257.23K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	SMBTA42M Q62702-A1243
OCR Text	...entary type: SMBTA 92M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 42M Marking Ordering Code Pin Configuration s1D Q62702-A1243 Package...6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-18-1997 1998-11-01 SMBTA 42M ...
Description	From old datasheet system NPN Silicon High-Voltage Transistor
File Size	26.68K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IDB09E120 Q67040-S4384 Q67040-S4479 IDP09E120
OCR Text	...bol VRRM IF Value 1200 23 14.4 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot ...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. ...
Description	Fast Switching EmCon Diode 快速开关快恢复二极 From old datasheet system Silicon Power Diodes - 9A EmCon in TO220-2 Silicon Power Diodes - 9A EmCon in TO263
File Size	195.90K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IDP12E120NBSP IDB12E120NBSP IDB12E120 Q67040-S4385 Q67040-S4389 IDP12E120
OCR Text	...ward current IF = f (VF) 36 4 Typ. diode forward voltage VF = f (Tj) 2.4 24A A 28 24 -55C 25C 100C 150C V 2 VF 1.8 IF 20 16 12 12A 1.6 6A 1.4 8 4 0 0 1.2 0.5 1 1.5 2 V VF 3 1 -60 ...
Description	Silicon Power Diodes - 12A EmCon in TO220-2 Silicon Power Diodes - 12A EmCon in TO263 Fast Switching EmCon Diode From old datasheet system
File Size	194.70K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IDD03E60 Q67040-S4377
OCR Text	...Symbol VRRM IF Value 600 7.3 4.9 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. ...
Description	Fast Switching EmCon Diode Silicon Power Diodes - 3A EmCon in TO252
File Size	179.78K / 8 Page	View it Online	Download Datasheet

For 4.6cm Found Datasheets File :: 891 Search Time::2.188ms
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