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Infineon Technologies A...
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Part No. |
PTF191601E PTF191601F
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OCR Text |
...high power rf ldmos fets 160 w, 1930 ? 1990 mhz features ? thermally-enhanced packaging ? broadband internal matching ? typical edge performance - average output power = 80 w - gain = 14 db - efficiency = 35% - evm = 2.5% ? typical cw perfo... |
Description |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
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File Size |
198.47K /
10 Page |
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Taiyo Yuden (U.S.A.), I...
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Part No. |
G6QD1G960N2DY
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OCR Text |
...fications (filter2) passband: 1930 ~ 1990 mhz item condition specification unit remarks min. typ. max. insertion loss 1930~1990 mhz - 1.9 2.7 db (*1) ripple 1930~1990 mhz - 0.6 1.5 db absolute... |
Description |
SAW Dual Filter
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File Size |
566.41K /
13 Page |
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it Online |
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Freescale Semiconductor
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Part No. |
MRF8S19140HR3 MRF8S19140HSR3
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OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Av... |
Description |
RF Power Field Effect Transistors
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File Size |
434.09K /
14 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
PXFC192207FH
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OCR Text |
...z carrier spacing, bw 3.84 mhz 1930 mhz 1960 mhz 1990 mhz c192207fh_g1 gain efficiency
data sheet 2 of 9 rev. 04, 2014-07-15 pxfc192207fh dc characteristics characteristic conditions symbol min typ max unit drain-source... |
Description |
Thermally-Enhanced High Power RF LDMOS FET
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File Size |
365.81K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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