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w insulated Datasheet PDF File

For w insulated Found Datasheets File :: 6822 Search Time::2.11ms
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				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2K 100B12K2 C67070-A2107-A70
OCR Text	...pation per IGBT Ptot 700 w + 150 -55 ... + 150 0.18 0.36 2500 20 11 F 55 / 150 / 56 Vac mm K/w C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test v...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	113.27K / 9 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2 100B12N2 C67076-A2107-A70
OCR Text	...pation per IGBT Ptot 800 w + 150 -55 ... + 150 0.16 0.3 2500 20 11 F 55 / 150 / 56 Vac mm K/w C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test vo...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	131.39K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM100GB170DN2 100B17N2 C67070-A2703-A67
OCR Text	...ation per IGBT Ptot 1000 w + 150 -55 ... + 150 0.13 0.4 4000 20 11 F 55 / 150 / 56 Vac mm K/w C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test vo...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
File Size	130.11K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BYT231PIV-1000 BYT230PIV-1000
OCR Text	...upling Value 1.5 0.8 0.1 Unit C/w when the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward vo...
Description	FAST RECOVERY RECTIFIER DIODES
File Size	73.42K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] Motorola, Inc
Part No.	BYT231PIV-400 BYT230PIV-400
OCR Text	...upling Value 1.5 0.8 0.1 Unit C/w when the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward vo...
Description	FAST RECOVERY RECTIFIER DIODES
File Size	65.30K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM10RSH120
OCR Text	...6 18 H U (4 TYP.) P B N U V w G V - DIA. (4 TYP.) N M M M E M M Z 1. V UPC 2. UFO 3. U P 4. V UPI 5. VVPC ...insulated PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Power Devic...
Description	FLAT-BASE TYPE insulated PACKAGE
File Size	80.14K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM300DSA060
OCR Text	...DARD VALUE = Rth(j-c)Q = 0.13oC/w 0 0 40 80 120 160 CASE TEMPERATURE, TC, (oC) 0 0 40 80 120 160 JUNCTION TEMPERATURE, TC, (oC) 10-3 10-3 10-2 10-1 TIME, (s) 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Ea...
Description	FLAT-BASE TYPE insulated PACKAGE
File Size	63.72K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	ST2310DHI
OCR Text	...-65 to 150 150 Unit V V V A A A w V o o C C 1/6 ST2310DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.3 o C/w ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR...
Description	HIGH VOLTAGE FAST-SwITCHING NPN POwER TRANSISTOR
File Size	246.38K / 6 Page	View it Online	Download Datasheet

For w insulated Found Datasheets File :: 6822 Search Time::2.11ms
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