...250.05
0.450.05
2
1
v
2.5 2.5
emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
v v mA mA mW C C
1:Base 2:Collec...
Description
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 v, NPN, Si, SMALL SIGNAL TRANSISTOR
... 5 1 2 0.9 150 -50 to +150 Unit v v v A A W C C
Electrical Characteristics (Ta = 25C)
2SD667 Item Collector to base breakdown voltage Co...250 200 150 100 50 0
Ta = 75 C
vCE = 5 v 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitte...
... 3 1 20 150 -55 to +150
Unit v v v A A W W C C
2
2SD669, 2SD669A
Electrical Characteristics (Ta = 25C)
2SD669 Item Collector to b...250 200 150 100 50 1 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) vCE = 5 v
75C Ta =
...
...AX 100 100 6 60 2 2.0 -
UNIT v v A A W v v s
LIMITING vALUES
SYMBOL
vCESM vCEO vEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emit...250 150
UNIT mA mA v v MHz pF us us us
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage...
...0 5 50 750 150 -55 to +150 Unit v v v mA mW C C
Electrical Characteristics (Ta = 25C)
2SD755 Item Collector to emitter breakdown voltage...250 125 -- -- -- -- Typ Max -- -- -- -- -- -- -- 350 1.6 -- -- 0.5 500 -- 0.75 0.2 -- -- v v Unit Te...
Description
Silicon NPN Transistor Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|2vAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | BJT | NPN | 120v v(BR)CEO | 50MA I(C) | TO-92vAR Silicon NPN Epitaxial SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN
...20 6 2 0.9 150 -50 to +150 Unit v v v A W C C
Electrical Characteristics (Ta = 25C)
2SD787 Item Collector to base breakdown voltage Coll...250 to 500 E 400 to 800
2
2SD787, 2SD788
Maximum Collector Dissipation Curve Collector Power ...
...50 6 1 0.9 150 -55 to +150 Unit v v v A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol v(BR...250 to 500 v(BR)EBO I CBO I EBO hFE*
100 -- -- -- E
vCE(sat) fT Cob
v MHz pF
I C = 1 A, ...
... 1 0.5 1 150 -55 ~ +150
Unit v v v A A W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package
marking
Marking symbol ...250 Ta=75C 200 25C -25C
Transition frequency fT (MHz)
300 1000
30 10 3 25C 1 0.3 0.1 0.03 0.0...
Description
Silicon NPN epitaxial planer type(For low-frequency power amplification)
...0 20 400 150 -55 ~ +150
Unit v v v mA mA mW C C
3
2
1
2.5
2.5
1:Base 2:Collector 3:Emitter
EIAJ:SC-71 M Type Mold Pa...250.05
s Absolute Maximum Ratings
0.550.1
0.450.05
(Ta=25C)
max 100 1
4.10.2
Hi...
Description
Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)