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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-TL45 K4E661612B-TL45 K4E641612B-TL50 K4E661612B-TL50
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OCR Text |
...tRHCP tOEA tOED tCPWD tOEZ tOEH twts tWTH tWRP tWRH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE tRASS tRPS tCHS
7
7 7,15 7 7 17 18
3 20 20 14
200K
ns ns
15
ns ns ns
13
ns ns ns ns ns ns ns
6
11 11
13 13
ns... |
Description |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
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File Size |
883.49K /
36 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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Part No. |
K4F641612E K4F661612E
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OCR Text |
...tRASP tRHCP tOEA tOED tOEZ tOEH twts tWTH tWRP tWRH tRASS tRPS tCHS
Industrial Temperature K4F661612E, K4F641612E
TEST MODE CYCLE
Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time f... |
Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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File Size |
376.99K /
35 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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Part No. |
KM41C4000D KM41V4000D
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OCR Text |
... tCPA tPC tPRWC tCP tRASP tRHCP twts tWTH tWRP tWRH tRASS tRPS tCHS
7 7 7 7 7
3
14,15,16 14,15,16 14,15,16
KM41C4000D, KM41V4000D
TEST MODE CYCLE
Parameter Random read or write cycle time Read-modify-write cycle time Access ti... |
Description |
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
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File Size |
340.24K /
20 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL-6 KM44C1000DJL-5 KM44V1000DJL-6 KM44V1000DJL-7 KM44C1000DJ-5 KM44V1000DJ-7
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OCR Text |
...tRASP tRHCP tOEA tOED tOEZ tOEH twts tWTH tWRP tWRH tRASS tRPS tCHS
7 7 7 7 7
3
6
14,15,16 14,15,16 14,15,16
KM44C1000D, KM44V1000D
TEST MODE CYCLE
Parameter Random read or write cycle time Read-modify-write cycle time Acce... |
Description |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
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File Size |
371.80K /
21 Page |
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it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004CS-L50
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OCR Text |
...tRHCP tOEA tOED tCPWD tOEZ tOEH twts tWTH tWRP tWRH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE tRASS tRPS tCHS
7
7 7,15 7 7 17 18
3 21 21 14
3
6
11 11
6,20 6
22,23,24 22,23,24 22,23,24
KM416V4004C,KM416V4104C
TEST M... |
Description |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
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File Size |
807.58K /
36 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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