to-220 to-247 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 2SK1308H STW6NA80 TD100 2N3053 PI6C2302 FPLA524 2218S 10330
	Product Description
	Full Text Search

to-220 to-247 Datasheet PDF File

For to-220 to-247 Found Datasheets File :: 2600 Search Time::5.687ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				UTC[Unisonic Technologies]
Part No.	MC33092
OCR Text	...ares the system battery voltage to an externally programmed set point value and pulse width modulates an N-channel MOSFET transistor to cont...220 240 260 280 300 320 340 360 Frequency, f (kHz) Note: ** For 24-pin package. VPin2=VPin10=VPin12...
Description	LINEAR INTEGRATED CIRCUIT
File Size	163.18K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFH58N20 IXFM50N20 IXFT50N20 IXFH50N20 IXFM42N20 IXFT58N20 IXFH42N20 IXFM58N20
OCR Text	... 45mW 58 A 40mW trr 200 ns to-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25C to 150C TJ = 25C to 1...220 50 110 VGS = 10 V, ID = 0.5 ID25 Min. IXFH/IXFM58N20 IXFT50N20 IXFT58N20 to-247 AD (IXFH) Ou...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	102.89K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5539
OCR Text	to UHF Low-Noise Wide-Band Amplifier Applications Features * Low noise : NF=1.1dB typ (f=1GHz). * High gain : S21e2=12dB typ (f=1GHz). * H...220 2.025 S21 144.3 123.3 103.2 92.8 85.6 79.9 74.7 70.3 66.2 62.2 58.5 \| S12 \| 0.031 0.046 0.059 0...
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
File Size	42.90K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBA1405 IRFBA1405P
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.0m S ID = 174A Description Specifically designed for Automot...220 TM is a package that has been designed to have the same mechanical outline and pinout as the ind...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A?) Power MOSFET(Vdss=55V Rds(on)=5.0mohm Id=174A) Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A)
File Size	171.96K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] Power MOSFET International Rectifier, Corp.
Part No.	IRFP054N
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 devices. The to-247 is similar but superior to the earlier TO-218 package because of its isolate...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A? 55V Single N-Channel HEXFET Power MOSFET in a to-247AC package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A) Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?) IC/71054 24P P DIP INTERFACE 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份证\u003d 81A条?
File Size	105.39K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFP054V
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 devices. The to-247 is similar but superior to the earlier TO-218 package because of its isolate...
Description	Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?) Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A)
File Size	155.92K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] Power MOSFET
Part No.	IRFP064N IRFP064NPBF
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 devices. The to-247 is similar but superior to the earlier TO-218 package because of its isolate...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A? 55V Single N-Channel HEXFET Power MOSFET in a to-247AC package Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)
File Size	103.66K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP064V
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 devices. The to-247 is similar but superior to the earlier TO-218 package because of its isolate...
Description	From old datasheet system Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)
File Size	152.71K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFR120N20
OCR Text	...ht Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead (...220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no...
Description	HiPerFETTM Power MOSFETs ISOPLUS247
File Size	33.63K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFR55N50F
OCR Text	...ght Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = ...220 55 60 3.0 10 400 -40 ... +150 150 -40 ... +150 V V V V A A A mJ J V/ns W C C C C V~ g ISOPLUS...
Description	HiPerRF Power MOSFETs F-Class: MegaHertz Switching
File Size	496.18K / 2 Page	View it Online	Download Datasheet

For to-220 to-247 Found Datasheets File :: 2600 Search Time::5.687ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |