| |
|
 |
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| Part No. |
MRF6S23100HXX MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3
|
| OCR Text |
... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 15.4 dB Drain Efficiency -- 23.5% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 40.5 dBc @ 3.84 MHz Channel Bandwidth * Capable of Ha... |
| Description |
RF Power Dield Effect Transistors
|
| File Size |
411.40K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Freescale Semiconductor
|
| Part No. |
MRF6S23140HSR3
|
| OCR Text |
... 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 15.2 db drain efficiency ? 25% im3 @ 10 mhz offset ? - 37 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 40 dbc in 3.84 mhz channel bandwidth ? capable of handli... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
| File Size |
458.03K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| Part No. |
MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19130HR3
|
| OCR Text |
....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 13 dB Drain Efficiency -- 25% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dB in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, ... |
| Description |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
| File Size |
426.09K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA
|
| Part No. |
MRF5S21150SR3
|
| OCR Text |
...MHz, Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 33 Watts Avg. Power Gain -- 12.5 dB Efficiency -- 25% IM3 -- -37 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and H... |
| Description |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
|
| File Size |
396.90K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| Part No. |
MRF6S27085H MRF6S27085HR306 MRF6S27085HSR3 MRF6S27085HR3 MRF6S27085HR3_06
|
| OCR Text |
....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 23.5% ACPR @ 885 kHz Offset -- - 48 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW Output Power Feature... |
| Description |
RF Power Field Effect Transistors
MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
|
| File Size |
388.89K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
