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  power-d-box Datasheet PDF File

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    BAV199LT1-D BAV199LT1/D

东电?中国)投资有限公司
ON Semiconductor
Part No. BAV199LT1-D BAV199LT1/D
OCR Text ...9 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the pad size. this can vary from the ...d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found ...
Description Dual Series Switching Diode 双系列开关二极管

File Size 39.23K  /  4 Page

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    SN74LS257B-D

ON Semiconductor
Part No. SN74LS257B-D
OCR Text ...l output current low 24 ma low power schottky soeiaj m suffix case 966 16 1 device package shipping ordering information sn74ls257bn 16 pin...d suffix case 751b plastic n suffix case 648 16 1 16 1 sn74ls257b, sn74ls258b http://onsemi.com 2 ...
Description Quad 2-Input Multiplexer with 3-State Outputs

File Size 76.39K  /  8 Page

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    MC14517B-D

ON Semiconductor
Part No. MC14517B-D
OCR Text ...r transient) per pin 10 ma p d power dissipation, per package (note 2.) 500 mw t a operating temperature range 55 to +125 c t stg storage temperature range 65 to +150 c t l lead temperature (8second soldering) 260 c 1. maximum ratings a...
Description Dual 64-Bit Static Shift Register

File Size 83.40K  /  8 Page

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    MC10H176-D

ON Semiconductor
Part No. MC10H176-D
OCR Text ...agation delay, 1.7 ns typical ? power dissipation, 460 mw typical ? improved noise margin 150 mv (over operating voltage and temperature ran...d). http://onsemi.com device package shipping ordering information mc10h176l cdip16 25 units/rail mc...
Description Hex D Master-Slave Flip-Flop

File Size 113.03K  /  8 Page

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    MBR3045ST-D

ON Semiconductor
Part No. MBR3045ST-D
OCR Text ...t preferred device switchmode ? power rectifier . . . using the schottky barrier principle with a platinum barrier metal. this stateoftheart...d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0....
Description SWITCHMODE Power Rectifier

File Size 56.14K  /  4 Page

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    MMJT350T1-D

ON Semiconductor
Part No. MMJT350T1-D
OCR Text power transistors pnp silicon . . . designed for use in lineoperated applications such as low power, lineoperated series pass and switching ...d @ t a = 25 c mounted on 1o sq. (645 sq. mm) collector pad on fr4 bd material to t a l p d @ ...
Description Bipolar Power Transistors PNP Silicon

File Size 55.53K  /  4 Page

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    MMSD914T1-D MMSD914T3

ON Semiconductor
Part No. MMSD914T1-D MMSD914T3
OCR Text ...of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. information for using the sod123 surfa...d = t j(max) t a r q ja p d = 150 c 25 c 556 c/w = 225 milliwatts the power dissipation of t...
Description Switching Diode

File Size 41.79K  /  4 Page

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    NUP6101DMR2-D

ON Semiconductor
Part No. NUP6101DMR2-D
OCR Text ...atures: ? micro8 package ? peak power 300 watts 8 x 20 s ? esd rating: iec 6100042 (esd) 15 kv (air) 8 kv (contact) iec 6100044 (eft) 40...d, duty cycle (%) pulse width 10 ms 52025 2 10 6 4 2 0 100 0 50 200 t, temperature ( c) 8 i r , typ...
Description Unidirectional TVS Array for High-Speed Data Line Protection

File Size 48.25K  /  4 Page

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