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M16H3 00002 NSPR510 3SB500 CM8562PG 161PC 1N4683 BZW03C13
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    VEMT2020X01 VEMT2000X01

Vishay Siliconix
Part No. VEMT2020X01 VEMT2000X01
OCR Text ...? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical drawings according to ...
Description Silicon NPN Phototransistor
   Silicon NPN Phototransistor

File Size 134.79K  /  8 Page

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    HYB18T1G800AF-3S HYB18T1G400AFL-37 HYB18T1G400AFL-5 HYB18T1G160AF HYB18T1G160AFL-37 HYB18T1G160AF-37

Infineon Technologies A...
Infineon Technologies AG
Part No. HYB18T1G800AF-3S HYB18T1G400AFL-37 HYB18T1G400AFL-5 HYB18T1G160AF HYB18T1G160AFL-37 HYB18T1G160AF-37
OCR Text ...data masks (dm) for write data ?posted cas by programmable additive latency for better command and data bus efficiency ? off-chip-driver impedance adjustment (ocd) and on-die- termination (odt) for better signal quality. ? auto-precharge ...
Description 1 Gbit DDR2 SDRAM 1千兆位DDR2内存
POT 1.0K OHM 1/4 SQ CERM SL ST

File Size 1,248.94K  /  89 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4T1G084QQ K4T1G084QQ-HCLE6 K4T1G084QQ-HCLE7 K4T1G084QQ-HCLF7 K4T1G164QQ-HCLE6 K4T1G044QQ-HCLF7 K4T1G164QQ-HCLF7 K4T1G044QQ-HCLE7
OCR Text ...for 800mb/sec/ pin ? 8 banks ? posted cas ? programmable cas latency: 3, 4, 5, 6 ? programmable additive laten cy: 0, 1, 2, 3, 4, 5 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmab...
Description 1Gb Q-die DDR2 SDRAM Specification 1Gb的调Q DDR2内存芯片规格

File Size 888.69K  /  44 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4T1G084QM-ZCCC K4T1G084QM-ZCD5 K4T1G044QM-ZCCC K4T1G164QM-ZCCC
OCR Text ...for 533mb/sec/pin. ? 8 banks ?posted cas ? programmable cas latency: 3, 4, 5 ? programmable additive latency: 0, 1 , 2 , 3 and 4 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmable...
Description 1Gb M-die DDR2 SDRAM Specification

File Size 460.05K  /  29 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4T1G084QD K4T1G164QD
OCR Text ...for 800mb/ sec/pin ? 8 banks ? posted cas ? programmable cas latency: 3, 4, 5, 6 ? programmable additive laten cy: 0, 1, 2, 3, 4, 5 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmab...
Description 1Gb D-die DDR2 SDRAM Specification

File Size 582.69K  /  27 Page

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    VT8363

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC
Part No. VT8363
OCR Text ...l read request queue Four level posted-write request queue Thirty-two level (quadwords) read data FIFO (256 bytes) Sixteen level (quadwords) write data FIFO (128 bytes) Intelligent request reordering for maximum AGP bus utilization Supports...
Description KT133 Athlon North Bridge

File Size 218.49K  /  9 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4T1G084QC
OCR Text ...for 800mb/ sec/pin ? 8 banks ? posted cas ? programmable cas latency: 3, 4, 5, 6 ? programmable additive latency: 0, 1, 2, 3, 4, 5 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmabl...
Description 1Gb C-die DDR2 SDRAM Specification

File Size 482.65K  /  26 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4T56043QF-ZCD5
OCR Text ... for 667mb/sec/pin ? 4 banks ? posted cas ? programmable cas latency: 3, 4, 5 ? programmable additive latency: 0, 1 , 2 , 3 and 4 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmable ...
Description 256Mb F-die DDR2 SDRAM
OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片

File Size 479.59K  /  27 Page

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    VSMY2850G

Vishay Siliconix
Part No. VSMY2850G
OCR Text ...? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical drawings according to d...
Description High Speed Infrared Emitting Diodes

File Size 197.26K  /  8 Page

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    Qimonda
Part No. HYB18T512160B
OCR Text ...ata masks (dm) for write data ? posted cas by programmable additive latency for better command and data bus efficiency ? off-chip-driver impedance adjustment (ocd) and on- die-termination (odt) for better signal quality ? auto-precharge op...
Description 512-Mbit Double-Data-Rate-Two SDRAM

File Size 1,809.73K  /  68 Page

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