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    CMT07N60 CMT0760FP

List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Champion Microelectronic Corporation
Part No. CMT07N60 CMT0760FP
OCR Text ...se Width 300s, Duty Cycle 2% ** negligible, Dominated by circuit inductance 2003/06/19 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2 CMT07N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS ...
Description POWER FIELD EFFECT TRANSISTOR

File Size 219.82K  /  7 Page

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    IRF7204 IRF7204TR

International Rectifier
Part No. IRF7204 IRF7204TR
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. ISD -5.3A, di/dt 90A/s, VDD V(BR)DS...
Description TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 141.26K  /  9 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. ISD -4.6A, di/dt 90A/s, VDD V(BR)DS...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF7301 IRF7301TR

IRF[International Rectifier]
Part No. IRF7301 IRF7301TR
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. I SD 2.6A, di/dt 100...
Description FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.86K  /  9 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. I SD 2.4A, di/dt 73A...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7304

International Rectifier
Part No. IRF7304
OCR Text ...00A/s Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) ISD -2.2A, di/dt - 50A/s, VDD V(BR)DSS, TJ 150C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; dut...
Description Generation V Technology

File Size 205.83K  /  6 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. ISD -1.8A, di/dt 90A...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF730APbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Cur...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF730A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    IRFL110

IRF[International Rectifier]
Part No. IRFL110
OCR Text ...0A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 5.6A, di/dt 75A/s, VDD V(BR)DSS, TJ 150C VDD=25V, starting...
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 241.54K  /  8 Page

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